L6385ED

Overview

The L6385ED is a high-voltage half-bridge gate driver manufactured using BCD offline technology. It drives N-channel power MOSFETs or IGBTs with a floating high-side section supporting voltage rails up to 600 V. The device features independent high and low-side outputs capable of sourcing 400 mA and sinking 650 mA, allowing simultaneous high drive for asymmetrical configurations. Logic inputs are CMOS/TTL compatible. Key electrical parameters include a maximum supply voltage of 17 V, output current of 650 mA, rise time of 50 ns, fall time of 30 ns, operating temperature range from -45 C to +125 C, and power dissipation of 750 mW.

Feature Summary

• Integrated bootstrap diode for compact design
• Undervoltage lockout on both driving sections
• High dV/dt immunity against transient noise
• Outputs toggle in phase with inputs

Applications

• Motor control systems
• Inverter circuits
• Power supply stages

Procurement Notes

Verify the specific package variant, as the L6385E series includes DIP-8 and SO-8 options. Confirm that the 'ED' suffix corresponds to the required tube packaging rather than tape and reel. Ensure the application voltage does not exceed the 600 V rail limit and that the logic interface matches the CMOS/TTL input requirements.

Selection Notes

Select this component when an asymmetrical half-bridge configuration is required, as it allows both outputs to be driven high simultaneously. Choose this over interlocked variants if cross-conduction protection via deadtime is handled externally or is unnecessary for the specific topology. Verify that the 650 mA sink current meets the gate charge requirements of the target power devices.

Part Context

The L6385ED belongs to the L6385E family of high-voltage gate drivers from STMicroelectronics. This family utilizes BCD technology to integrate high-voltage capabilities with standard logic interfaces. The series includes variants with different safety features, such as interlocking and deadtime functions, making the L6385E suitable for applications requiring flexible switching control without internal cross-conduction prevention.

Replacement Considerations

• L6385ED013TR

FAQ

Can the L6385ED drive both high-side and low-side outputs high at the same time?

Yes, unlike some other variants in the series, the L6385ED allows both outputs to be driven high simultaneously, enabling asymmetrical half-bridge configurations.

What is the purpose of the integrated bootstrap diode?

The integrated bootstrap diode simplifies the external circuit design by eliminating the need for a discrete diode, resulting in a more compact and reliable solution for powering the high-side driver.