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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:17V (Max)
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6385ED013TR is a high-voltage half-bridge gate driver manufactured by STMicroelectronics using BCD offline technology. It drives N-channel power MOSFETs or IGBTs with a floating high-side section supporting up to 600 V rails. The device integrates an internal bootstrap diode and provides independent high-current outputs capable of sourcing 400 mA and sinking 650 mA. It features CMOS/TTL compatible Schmitt trigger inputs, undervoltage lockout for both sections, and dV/dt immunity of ±50 V/nsec. Packaged in SOIC-8 tape and reel.
Feature Summary
- Integrates an internal bootstrap diode to simplify circuit design and reduce component count.
- Provides high dV/dt immunity of ±50 V/nsec across the full operating temperature range.
- Features independent high-side and low-side drivers with simultaneous high-drive capability for asymmetrical configurations.
- Includes undervoltage lockout protection on both lower and upper driving sections.
Applications
- Driving half-bridge configurations of power MOSFETs or IGBTs
- High-voltage motor control applications
- Industrial power supply designs
Procurement Notes
Verify the specific suffix ED013TR confirms the SOIC-8 tape and reel packaging format required for automated assembly. Confirm that the device status remains active as availability may vary. Ensure compatibility with the intended logic voltage levels and check for any recent obsolescence notices from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when a compact solution for high-voltage half-bridge driving is required without external bootstrap diodes. It is suitable for applications needing robust dV/dt immunity and independent control of high-side and low-side switches. Consider the SOIC-8 package constraints and thermal dissipation capabilities relative to the expected switching frequency and load conditions.
Part Context
This part belongs to the L6385E series of high-voltage gate drivers. It shares core functional specifications with other variants in the family but differs in packaging and ordering suffixes. The series is designed for offline applications utilizing BCD technology to handle high voltages efficiently within a small footprint.
Replacement Considerations
The L6385ED is a tube-packaged variant of the same electrical device. Verify if the manufacturing lot or specific revision matches requirements when substituting between tape/reel and tube formats.
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