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L6386D013TR
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 14SO
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：Half-Bridge
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：IGBT, MOSFET (N-Channel)
- Voltage - Supply：17V (Max)
- Logic Voltage - VIL, VIH：1.5V, 3.6V
- Current - Peak Output (Source, Sink)：400mA, 650mA
- Input Type：Inverting
- Rise / Fall Time (Typ)：50ns, 30ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：14-SO
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：600 V
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Overview
The L6386D013TR is a high-voltage half-bridge gate driver manufactured by STMicroelectronics, designed for driving N-channel MOSFETs and IGBTs. It operates with a supply voltage up to 17V and supports bootstrap voltages up to 600V. The device features independent high-side and low-side outputs with peak currents of 400mA (source) and 650mA (sink). Typical switching times are 50ns rise and 30ns fall. It is housed in a 14-pin SOIC package and functions within a junction temperature range of -40°C to 150°C.
Feature Summary
- Integrated high-voltage half-bridge configuration supporting bootstrap operation up to 600V
- Independent high-side and low-side drivers with asymmetric output current capabilities
- Compatible with standard CMOS and TTL logic input levels
Applications
- Motor control systems requiring high-side switching
- Power supply topologies utilizing half-bridge configurations
- Industrial applications driving IGBT or MOSFET loads
Procurement Notes
Verify the specific suffix 'D' against official STMicroelectronics documentation to confirm exact revision status, as availability may vary. Confirm RoHS compliance and lead-free status through the manufacturer's current datasheet. Ensure the 14-SOIC package dimensions match your PCB footprint requirements before finalizing procurement.
Selection Notes
Select this component when a robust half-bridge driver with high voltage tolerance is required. The 600V bootstrap capability suits high-side applications where isolated power is needed. Consider the 14-pin SOIC package for surface-mount assembly. Verify that the 400mA/650mA drive strength meets the gate charge requirements of the target MOSFETs or IGBTs.
Part Context
This part belongs to the L6386E series of high-voltage gate drivers from STMicroelectronics. It is functionally related to variants such as L6386ED013TR and E-L6386D013TR. These devices are categorized under PMIC gate drivers and are distinct from lower-pin-count alternatives like the L6388 series.
Replacement Considerations
L6386ED013TR is a documented variant within the same family. Verify pinout compatibility and electrical specifications against the official datasheet before substitution.
