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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 14DIP
- Series:-
- Mfr:STMicroelectronics
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:17V (Max)
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:14-DIP (0.300", 7.62mm)
- Supplier Device Package:14-DIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6386E is a high-voltage half-bridge gate driver manufactured using BCD offline technology, designed to simultaneously drive one high-side and one low-side power MOSFET or IGBT. It supports a floating high-side voltage rail up to 600 V with a maximum supply voltage of 17 V. The device features independent outputs capable of sinking 650 mA and sourcing 400 mA. Key electrical parameters include a rise time of 50 ns and a fall time of 30 ns under a 1 nF load. Logic inputs are CMOS/TTL compatible, and the operating temperature range extends from -45 °C to 125 °C.
Feature Summary
- Integrates an internal bootstrap diode for compact design
- Provides undervoltage lockout protection on both supply voltages
- Includes an embedded comparator for overcurrent fault detection
- Features high dV/dt immunity across the full temperature range
Applications
- Driving asymmetrical half-bridge configurations
- High-voltage power stage control for N-channel MOSFETs
- IGBT gate driving in offline applications
- Overcurrent protection circuits via diagnostic output
Procurement Notes
Verify the specific package variant required, as the L6386E family includes DIP-14 and SO-14 options. Confirm that the selected part number corresponds to the tube or tape-and-reel packaging needed for your assembly process. Ensure compatibility with the intended voltage rail and logic interface levels before finalizing procurement.
Selection Notes
Select this component when a single-chip solution for high-side and low-side driving is required with integrated bootstrap functionality. It is suitable for designs needing robust dV/dt immunity and built-in fault signaling through the DIAG pin. Consider the available packaging formats and ensure the input logic levels match the controlling device specifications.
Part Context
The L6386E belongs to the L638xE series of high-voltage gate drivers from STMicroelectronics. This series utilizes BCD technology to integrate power and logic functions on a single chip. The device is part of a broader family that includes variants with different deadtime and protection features, all aimed at simplifying the design of efficient power conversion systems.
Replacement Considerations
Compatible alternatives within the same family include the L6385E, L6387E, L6388E, and L6389E. These parts share similar high-voltage capabilities but may differ in internal deadtime settings or additional protection features. Verify functional equivalence regarding output current and logic compatibility before substitution.
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