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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 14SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:17V (Max)
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:14-SO
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6386ED is a high-voltage half-bridge gate driver manufactured by STMicroelectronics using BCD offline technology. It features two independent outputs capable of driving N-channel power MOSFETs or IGBTs with peak currents of 400 mA source and 650 mA sink. The device supports a high-side voltage rail up to 600 V and operates with supply voltages up to 17 V. Key electrical parameters include a rise time of 50 ns, fall time of 30 ns, and propagation delay of 150 ns. It utilizes CMOS/TTL compatible logic inputs and includes undervoltage lockout protection for both supply sections.
Feature Summary
- High-voltage floating section designed for rails up to 600 V
- Integrated bootstrap diode for compact circuit design
- CMOS/TTL Schmitt trigger inputs with hysteresis
- Undervoltage lockout protection on both high and low side supplies
Applications
- Driving asymmetrical half-bridge configurations
- Power stage control for N-channel MOSFETs
- Gate driving for IGBT devices in offline applications
- Industrial motor control systems
Procurement Notes
Verify the specific suffix 'ED' indicates the SOIC-14 tube packaging variant distinct from tape-and-reel options. Confirm that the component meets RoHS compliance standards as specified in the manufacturer's documentation. Ensure the ordering part number matches the exact package style required for the target PCB layout. Cross-reference the datasheet revision date to confirm current availability status and any potential lifecycle changes.
Selection Notes
Select this component when a single-chip solution for high-side and low-side driving is required without external bootstrap diodes. It is suitable for designs needing synchronous output switching with minimal deadtime constraints. Consider the 600 V rating for high-power isolation requirements. Verify input logic levels match the controlling microcontroller or Hall-effect interface voltage range.
Part Context
The L6386ED belongs to the L638xE series of high-voltage gate drivers from STMicroelectronics. This family utilizes BCD technology to integrate high-voltage capabilities with standard logic interfaces. The series is designed for robust performance in offline power conversion and motor drive applications requiring reliable half-bridge operation.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult official distributor databases for cross-reference data.
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