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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 14SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:17V (Max)
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:14-SO
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6386ED013TR is a high-voltage half-bridge gate driver manufactured by STMicroelectronics, designed for driving IGBTs and N-channel MOSFETs. It features two independent drivers in a 14-SOIC surface-mount package. The device supports a supply voltage up to 17 V and delivers peak output currents of 650 mA (source) and 400 mA (sink). It operates with CMOS/TTL compatible logic inputs and handles bootstrap voltages up to 600 V. Key timing parameters include a typical rise time of 50 ns and fall time of 30 ns. The component functions within an operating temperature range of -40 °C to +150 °C TJ.
Feature Summary
- Provides isolated high-side and low-side drive capabilities for half-bridge topologies using a single supply.
- Features fast switching performance with nanosecond-scale rise and fall times for efficient power control.
- Compatible with standard digital logic families including CMOS and TTL input thresholds.
Applications
- Motor drive and control systems
- Power management circuits
- Industrial automation and process control
Procurement Notes
Verify the specific suffix ED013TR confirms the SOIC-14 tape-and-reel packaging configuration. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly line. Ensure the ordering part number matches the exact manufacturer designation to avoid pinout or electrical specification mismatches during procurement.
Selection Notes
Select this component when a robust half-bridge driver is required for high-voltage applications up to 600 V bootstrap operation. Consider the 14-SOIC package constraints and thermal dissipation limits of 750 mW. Verify that the input logic levels align with your control system's CMOS or TTL standards before integration into the design.
Part Context
This part belongs to the L6386E series of high-voltage gate drivers from STMicroelectronics. It is specifically the reel-packaged variant of the L6386ED, sharing identical electrical characteristics with the tube-packaged version but differing only in shipping format. The series is engineered for reliable operation in demanding industrial environments.
Replacement Considerations
The L6386ED serves as the tube-packaged equivalent with identical electrical specifications. Other members of the L6386 family may offer different packaging or minor parameter variations; verify datasheet details before substitution.
FAQ
What is the maximum bootstrap voltage supported by this driver?
The L6386ED013TR supports a maximum high-side voltage of 600 V when using a bootstrap configuration.
Is the input logic compatible with both CMOS and TTL?
Yes, the device accepts input signals compatible with both CMOS and TTL logic families.
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