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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDG 8MINIDIP
- Series:-
- Mfr:STMicroelectronics
- Package:Tube,Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:17V (Max)
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-45°C ~ 125°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-Mini DIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6387ED is a high-voltage half-bridge gate driver manufactured using BCD offline technology. It drives N-channel power MOSFETs or IGBTs with a floating high-side section supporting up to 600 V rails. The device features independent outputs sourcing 400 mA and sinking 650 mA, with switching times of 50 ns rise and 30 ns fall under 1 nF load. Logic inputs are CMOS/TTL compatible, and the unit includes UVLO protection, an internal bootstrap diode, and interlocking functions.
Feature Summary
- High voltage rail capability up to 600 V for floating high-side operation
- Integrated interlocking function prevents simultaneous conduction of high and low sides
- Built-in bootstrap diode simplifies circuit design and reduces component count
- CMOS and TTL compatible Schmitt trigger inputs ensure reliable interfacing
Applications
- Driving half-bridge power stages with N-channel MOSFETs
- Gate driving IGBT devices in industrial motor control
- Inverter circuits requiring high dV/dt immunity
- Power supply topologies utilizing isolated high-side switching
Procurement Notes
Verify the specific ordering suffix (e.g., ED vs E) to confirm package type and tape/reel configuration. Ensure the selected variant matches the required PCB footprint and manufacturing process. Cross-reference the datasheet revision date to confirm compatibility with current design specifications and environmental compliance standards before finalizing procurement orders.
Selection Notes
Select this component when a robust half-bridge driver with integrated protection is required. The built-in bootstrap diode eliminates external components, reducing board space. Verify that the input logic levels match the controlling microcontroller or Hall-effect interface. Confirm that the output current capabilities meet the gate charge requirements of the target power switches within the specified temperature range.
Part Context
The L6387E series belongs to STMicroelectronics' portfolio of high-voltage gate drivers designed for offline applications. Manufactured on BCD technology, these devices integrate high-voltage and logic circuits on a single chip. The family includes variants like L6385, L6388, and L6389, offering different deadtime and protection features while maintaining similar core architecture and pinout compatibility for flexible system design.
Replacement Considerations
L6387ED013TR serves as the tape and reel version of the L6387ED tube part. Other family members such as L6385E, L6388E, and L6389E share the same pinout but may differ in deadtime or protection features. Verify functional equivalence regarding interlocking and bootstrap integration before substitution.
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