L6387E

Overview

The L6387E is a high-voltage half-bridge gate driver manufactured using BCD offline technology. It drives N-channel power MOSFETs or IGBTs with a floating high-side section supporting voltage rails up to 600 V. The device provides independent output current capabilities of 400 mA source and 650 mA sink. Logic inputs are CMOS/TTL compatible, ensuring interface ease with control devices. Key electrical parameters include a rise time of 50 ns and a fall time of 30 ns with a 1 nF load. Operating temperatures range from -45 °C to +125 °C.

Feature Summary

• Integrated interlocking function prevents simultaneous conduction of high-side and low-side outputs to ensure anti-cross-conduction protection.
• Built-in bootstrap diode eliminates the need for external components, allowing for more compact and reliable circuit designs.
• High dV/dt immunity of ±50 V/ns across the full temperature range ensures stable operation in noisy environments.
• CMOS/TTL Schmitt trigger inputs feature hysteresis and pull-down resistors for robust signal integrity.

Applications

• Driving half-bridge power stages based on N-channel MOSFETs
• Driving half-bridge power stages based on IGBTs
• Motor control applications requiring high-voltage isolation

Procurement Notes

Verify the specific package variant (DIP-8 or SO-8) required for the design, as both are available within the L6387E series. Confirm that the application voltage rail does not exceed the 600 V limit specified for the high-side floating section. Ensure compatibility with the intended logic supply levels for the CMOS/TTL inputs before finalizing procurement.

Selection Notes

Select the L6387E when a single-chip solution for driving N-channel MOSFETs or IGBTs in a half-bridge configuration is needed. It is suitable for applications requiring high dV/dt immunity and integrated bootstrap functionality. Consider this component if the design benefits from reduced component count due to the internal diode and interlocking features.

Part Context

The L6387E belongs to the L638xE family of high-voltage gate drivers from STMicroelectronics. This family utilizes BCD offline technology to provide robust performance in demanding power electronics applications. The L638xE series shares common architectural features with the L639x series but differs in pinout and specific functional configurations.

Replacement Considerations

L6387ED: Same functional specifications as L6387E but packaged in an SO-8 tube instead of DIP-8.