L6387ED013TR

L6387ED013TR

$1.22
  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:335a6ecb48b0 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:17V (Max)
  • Logic Voltage - VIL, VIH:1.5V, 3.6V
  • Current - Peak Output (Source, Sink):400mA, 650mA
  • Input Type:Inverting
  • Rise / Fall Time (Typ):50ns, 30ns
  • Operating Temperature:-45°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

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L6387ED013TR

Overview

The L6387ED013TR is a high-voltage half-bridge gate driver manufactured by STMicroelectronics using BCD offline technology. It drives power MOSFETs or IGBTs with a floating high-side section supporting up to 600 V. The device provides independent outputs capable of sourcing 400 mA and sinking 650 mA, featuring an integrated interlocking function to prevent simultaneous conduction. Logic inputs are CMOS/TTL compatible, and the component includes UVLO protection and an internal bootstrap diode.

Feature Summary

  • High voltage rail support up to 600 V for floating high-side operation
  • Integrated interlocking function prevents simultaneous high-side and low-side drive
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Internal bootstrap diode eliminates external component requirements

Applications

  • Driving half-bridge configurations of power MOSFET devices
  • Driving half-bridge configurations of IGBT devices
  • Offline power supply control circuits

Procurement Notes

Verify the specific suffix ED013TR against official documentation to confirm tape and reel packaging and lead-free status. Ensure compatibility with the required SOIC-8 footprint and check humidity sensitivity level (MSL 3) handling requirements during assembly. Confirm that the ordering code matches the exact electrical specifications and package type intended for the design.

Selection Notes

Select this component when a compact solution for driving high-side and low-side switches in a half-bridge topology is required. The integrated bootstrap diode and interlocking function simplify circuit design and enhance reliability. Verify that the input logic levels match the controlling device and that the operating temperature range meets system requirements.

Part Context

This part belongs to the L6387E series of high-voltage gate drivers from STMicroelectronics. It is designed for applications requiring robust switching of power semiconductors. The device utilizes BCD technology to integrate high-voltage capabilities with standard logic interfaces on a single chip.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

L6387ED013TRL6387ED013TR
$1.22
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