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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:17V (Max)
- Logic Voltage - VIL, VIH:1.1V, 1.8V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):70ns, 40ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6388ED013TR is a high-voltage half-bridge gate driver manufactured by STMicroelectronics using BCD offline technology. It supports a floating high-side rail up to 600 V with ±50 V/nsec dV/dt immunity. The device provides 400 mA source and 650 mA sink output currents, operating within a supply voltage range of -300 mV to 17 V. Switching times are 70 ns rise and 40 ns fall with a 1 nF load. It accepts CMOS/TTL inputs at 3.3 V, 5 V, or 15 V, features an internal bootstrap diode, and operates from -45 °C to +125 °C in an SOIC-8 package.
Feature Summary
- Integrated interlocking and deadtime functions prevent simultaneous high-side and low-side conduction.
- Built-in bootstrap diode enables compact circuit design without external components.
- Under-voltage lockout (UVLO) protects both the main supply and bootstrap voltages.
Applications
- Driving power MOSFETs in high-voltage half-bridge configurations
- Driving IGBT devices in offline power supply applications
- Motor control systems requiring high dv/dt immunity
Procurement Notes
Verify the specific suffix ED013TR confirms the SOIC-8 tape and reel packaging format. Confirm RoHS compliance status through official manufacturer documentation. Ensure the ordering part number matches the required logic input compatibility and thermal performance specifications for the target application environment.
Selection Notes
Select this component when a single-chip solution for high-voltage half-bridge driving is required. The integrated bootstrap diode reduces external component count compared to drivers lacking this feature. Verify that the 600 V floating rail capability meets the system's bus voltage requirements and that the 400 mA/650 mA drive strength is sufficient for the target power device gate capacitance.
Part Context
This part belongs to the L6388E series of high-voltage gate drivers. It utilizes BCD offline technology to integrate high-voltage capabilities with standard logic interfaces. The series is designed specifically for driving power switches in isolated or floating high-side configurations common in industrial and consumer power electronics.
Replacement Considerations
Check for direct pin-compatible alternatives within the same STMicroelectronics portfolio. Verify that any substitute maintains the 600 V high-side rating and similar current sourcing/sinking capabilities. Ensure the replacement includes necessary protection features like UVLO and interlocking if present in the original design.
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