L6389ED

L6389ED

$0.88
  • Description:IC GATE DRVR HALF-BRIDGE HI/LO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:e9114e7d5233 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE HI/LO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:17V (Max)
  • Logic Voltage - VIL, VIH:1.1V, 1.8V
  • Current - Peak Output (Source, Sink):400mA, 650mA
  • Input Type:Inverting
  • Rise / Fall Time (Typ):70ns, 40ns
  • Operating Temperature:-45°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

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L6389ED

Overview

The L6389ED is a high-voltage half-bridge gate driver manufactured using BCD offline technology, designed to drive power MOSFETs or IGBTs. It supports a floating high-side voltage rail up to 600 V and provides 650 mA sink and 400 mA source output currents. The device features integrated interlocking and deadtime functions to prevent cross-conduction. Logic inputs are CMOS/TTL compatible with 3.3 V, 5 V, and 15 V levels. It includes an internal bootstrap diode and UVLO protection for both supply voltages.

Feature Summary

  • Integrated interlocking and deadtime functions ensure prevention of simultaneous high-side and low-side conduction.
  • High dV/dt immunity of ±50 V/ns across the full temperature range ensures reliable operation in noisy environments.
  • Internal bootstrap diode enables compact circuit design by eliminating external components.
  • Dual UVLO protection on VCC and VBOOT supplies enhances system reliability against voltage drops.

Applications

  • Driving half-bridge configurations of N-channel power MOSFETs
  • Driving half-bridge configurations of IGBTs
  • Industrial motor control systems
  • Inverter circuits requiring high-voltage isolation

Procurement Notes

Verify the suffix 'ED' corresponds to the specific tube packaging configuration as defined in the official datasheet. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the ordering quantity aligns with the manufacturer's standard tube pack size to avoid partial reel issues. Cross-reference the active status with the latest STMicroelectronics product lifecycle notifications.

Selection Notes

Select this component when a single-chip solution for high-voltage half-bridge driving is required. It is suitable for applications needing robust dV/dt immunity and integrated protection against shoot-through. The CMOS/TTL input compatibility simplifies interfacing with various microcontrollers. Consider the SO-8 package constraints for thermal management in high-current applications.

Part Context

The L6389E belongs to the L638xE family of high-voltage gate drivers from STMicroelectronics. This family utilizes BCD technology to integrate high-voltage capabilities with logic control. The L6389E variant specifically offers fixed deadtime and interlocking features, distinguishing it from variants with adjustable timing or different protection schemes within the same portfolio.

Replacement Considerations

Compatible devices within the L638xE family include L6385E, L6387E, and L6388E. Verify functional differences such as deadtime adjustability or specific protection features before substitution. The EVALSTDRV600HB8 evaluation board supports testing these interchangeable drivers in identical half-bridge configurations.

L6389EDL6389ED
$0.88
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