L6389EDTR

Overview

The L6389EDTR is a high-voltage gate driver manufactured using BCD offline technology, designed to drive half-bridge configurations of power MOSFETs or IGBTs. It supports a high-side floating voltage rail up to 600 V and provides dV/dt immunity of ±50 V/ns across the full temperature range. The device delivers a source current of 400 mA and a sink current of 650 mA, with switching times of 70 ns rise and 40 ns fall under a 1 nF load. Logic inputs are compatible with 3.3 V, 5 V, and 15 V CMOS/TTL standards. It includes an integrated bootstrap diode, UVLO protection for both supply voltages, and features deadtime and interlocking functions to prevent cross-conduction.

Feature Summary

• Integrated interlocking and deadtime functions prevent simultaneous output activation and cross-conduction in half-bridge applications.
• High dV/dt immunity ensures reliable operation in high-noise environments with rapid voltage transitions.
• Built-in bootstrap diode simplifies circuit design by reducing external component count and improving reliability.
• Dual UVLO protection on main and bootstrap supplies safeguards against insufficient driving voltage conditions.

Applications

• Driving half-bridge power MOSFET or IGBT stages in offline power supplies
• Motor control systems requiring robust high-side switching capabilities
• Industrial inverters and converters utilizing isolated gate drive signals

Procurement Notes

Verify that the suffix 'EDTR' corresponds to the tape-and-reel packaging format, distinct from the tube-packaged 'L6389E'. Confirm the specific voltage rating and package type match your PCB layout requirements. Ensure compatibility with your controller's logic voltage levels (3.3 V, 5 V, or 15 V). Check for any regional compliance certifications required for your target market before finalizing the order.

Selection Notes

Select this component when a high-voltage half-bridge driver with integrated protection features is required. The 600 V rail capability suits offline applications. The integrated bootstrap diode reduces bill-of-materials complexity compared to discrete solutions. Consider the 400 mA/650 mA drive strength for medium-power MOSFETs or IGBTs. Verify that the SO-8 package fits your thermal and spatial constraints.

Part Context

The L6389 series comprises high-voltage gate drivers for half-bridge topologies. The L6389EDTR variant specifically denotes the tape-and-reel packaging option, whereas the L6389E refers to the tube version. Both share identical electrical characteristics and functionality. This family utilizes BCD technology to integrate high-voltage components with low-voltage logic on a single chip.

Replacement Considerations

The L6388ED serves as a related alternative within the same product family, offering similar high-side and low-side driver capabilities. Verify pinout compatibility and specific current ratings before substitution. No other direct substitute part numbers are confirmed in the provided documentation.