L6390D

L6390D

$1.56
  • Description:IC GATE DRVR HALF-BRIDGE 16SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:7b9a17025ae3 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 16SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:12.5V ~ 20V
  • Logic Voltage - VIL, VIH:1.1V, 1.9V
  • Current - Peak Output (Source, Sink):290mA, 430mA
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):75ns, 35ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:16-SO
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

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L6390D

Overview

The L6390D is a high-voltage half-bridge gate driver manufactured using BCD offline technology, designed for N-channel power MOSFETs or IGBTs. It supports a floating high-side voltage rail up to 600 V with dV/dt immunity of ±50 V/nsec. The device provides 290 mA source and 430 mA sink output currents, with switching times of 75 ns rise and 35 ns fall under a 1 nF load. Logic inputs are CMOS/TTL compatible down to 3.3 V. Key integrated features include an operational amplifier for advanced current sensing, a comparator with smartSD function for fault protection, adjustable deadtime, and an integrated bootstrap diode.

Feature Summary

  • Integrated operational amplifier suitable for advanced current sensing in field-oriented motor control or sensorless BEMF detection applications
  • Embedded comparator featuring smartSD function for fast and effective protection against overcurrent and overtemperature events
  • Adjustable deadtime and interlocking functions ensure prevention of cross-conduction between high-side and low-side outputs
  • Integrated bootstrap diode simplifies application PCB design by reducing component count and layout complexity

Applications

  • Field oriented control (FOC) of permanent magnet synchronous motors (PMSM)
  • Sensorless back-electromotive force (BEMF) detection systems
  • High-frequency power conversion circuits requiring robust half-bridge driving

Procurement Notes

Verify the specific suffix 'D' corresponds to the SO-16 tube or tape and reel packaging option as defined in official STMicroelectronics documentation. Confirm that the operating temperature range and electrical parameters match the intended industrial application requirements before finalizing procurement orders.

Selection Notes

Select this component when a single-chip solution is required for high-voltage half-bridge applications up to 600 V. It is appropriate for designs needing integrated current sensing via the embedded op-amp and hardware-based fault protection through the smartSD comparator. Ensure compatibility with 3.3 V or 5 V logic control signals for seamless interfacing.

Part Context

The L6390 belongs to the L639x series of high-voltage gate drivers from STMicroelectronics. This family utilizes BCD offline technology to provide compact, high-performance solutions for driving power switches. The L6390 distinguishes itself within the series by including both an operational amplifier and a dedicated comparator for enhanced system integration and protection capabilities.

Replacement Considerations

The L6393 is a related half-bridge gate driver in the same series. However, the L6393 lacks the integrated operational amplifier found in the L6390, offering only an uncommitted comparator. Verify if the specific current sensing requirements of the application can be met without the embedded op-amp before considering substitution.

L6390DL6390D
$1.56
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