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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 14SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:10V ~ 20V
- Logic Voltage - VIL, VIH:1.1V, 1.9V
- Current - Peak Output (Source, Sink):290mA, 430mA
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):75ns, 35ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:14-SO
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6393D is a high-voltage half-bridge gate driver manufactured using BCD offline technology, designed for N-channel power MOSFETs or IGBTs. It features a floating high-side section capable of withstanding a voltage rail up to 600 V. The device operates within a supply voltage range of 10 V to 20 V and supports CMOS/TTL logic inputs down to 3.3 V. Key electrical parameters include a maximum output current of 430 mA sink and 290 mA source, with switching times of 75 ns rise and 35 ns fall under a 1 nF load. It offers dV/dt immunity of ±50 V/nsec across the full temperature range and includes an uncommitted comparator for protection functions.
Feature Summary
- High-voltage floating high-side section rated for up to 600 V rails
- Integrated bootstrap diode and adjustable deadtime for simplified layout
- CMOS/TTL compatible logic inputs supporting 3.3 V interfacing
- Built-in uncommitted comparator for overcurrent and overtemperature protection
Applications
- Driving N-channel power MOSFETs in half-bridge configurations
- Driving IGBTs in high-voltage power conversion circuits
- Offline power supply designs requiring isolated gate control
- Motor drive systems utilizing high-side and low-side switching
Procurement Notes
Verify the specific suffix 'D' indicates the SOIC-14 surface mount package variant when ordering. Confirm that the required operating temperature range aligns with the specified -40 °C to +125 °C limits. Ensure the application circuit provides adequate decoupling for the 10 V to 20 V supply range to maintain stability. Check for moisture sensitivity handling requirements during storage and assembly processes.
Selection Notes
Select the L6393D when a single-chip solution is needed for driving both high-side and low-side switches in a half-bridge topology. It is suitable for applications requiring robust dV/dt immunity and integrated protection features via the uncommitted comparator. Consider this component if the design benefits from reduced bill of materials through the integrated bootstrap diode and adjustable deadtime capabilities.
Part Context
The L6393D belongs to the L639x series of half-bridge gate drivers from STMicroelectronics. This family utilizes BCD technology to integrate high-voltage capabilities with standard logic interfaces. Other members of the series may vary in pinout configurations, such as SOIC-8 or SOIC-16 packages, or differ in specific current drive capabilities and supply voltage ranges.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Designers should verify compatibility with existing PCB footprints and thermal requirements before considering alternative components.
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