L6393DTR

L6393DTR

$1.43
  • Description:IC GATE DRVR HALF-BRIDGE 14SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:33120a4202ea Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 14SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:10V ~ 20V
  • Logic Voltage - VIL, VIH:1.1V, 1.9V
  • Current - Peak Output (Source, Sink):290mA, 430mA
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):75ns, 35ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:14-SO
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

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L6393DTR

Overview

The L6393DTR is a high-voltage half-bridge gate driver manufactured using BCD offline technology, designed for driving N-channel power MOSFETs or IGBTs. It features a floating high-side section capable of withstanding a voltage rail up to 600 V. The device operates within a supply voltage range of 10 V to 20 V and supports logic inputs compatible with 3.3 V, 5 V CMOS/TTL standards. Key electrical parameters include a maximum switching frequency of 0.8 MHz, rise and fall times of 75 ns and 35 ns respectively with a 1 nF load, and peak output currents of 290 mA source and 430 mA sink. It dissipates up to 800 mW and functions across an extended temperature range from -40 °C to +125 °C.

Feature Summary

  • High dV/dt immunity rated at ±50 V/nsec across the full temperature range
  • Integrated uncommitted comparator available for overcurrent and overtemperature protection
  • Built-in bootstrap diode simplifies circuit layout and reduces bill of materials
  • Adjustable deadtime control prevents shoot-through in half-bridge configurations

Applications

  • Motor control systems
  • Power supplies
  • Inverter circuits

Procurement Notes

Verify that the specific part number matches the required package type and tape-and-reel configuration. Confirm that the component meets RoHS compliance standards as indicated in official documentation. Ensure that the supplier provides valid traceability data and authentic manufacturer markings to guarantee component integrity during procurement.

Selection Notes

Select this component when designing isolated gate drive circuits requiring robust high-side performance. The integrated comparator and adjustable deadtime simplify protection implementation. Verify that the input logic levels match the microcontroller or DSP interface voltages. Ensure the thermal management strategy accommodates the specified power dissipation limits under operating conditions.

Part Context

This component belongs to the L6393 family of half-bridge gate drivers produced by STMicroelectronics. The 'D' suffix typically denotes a specific package variant, while 'TR' indicates reel packaging. These devices are engineered for offline applications utilizing BCD technology, providing a compact solution for driving power switches in demanding environments.

Replacement Considerations

Consult official substitution lists for verified alternatives such as other variants within the L6393 series. Ensure any replacement maintains compatibility with the 600 V high-side rail and 3.3 V/5 V logic inputs. Verify pinout alignment and thermal characteristics before integration into existing designs.

FAQ

What is the maximum voltage rating for the high-side floating section?

The high-side section is designed to withstand a voltage rail up to 600 V.

Does the device include protection features against short circuits?

Yes, it embeds an uncommitted comparator that can be configured for overcurrent protection.

Is the bootstrap diode external or internal?

The bootstrap diode is integrated internally within the IC.

L6393DTRL6393DTR
$1.43
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