L6399D

L6399D

$0.69
  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:db8fabbc761f Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:10V ~ 20V
  • Logic Voltage - VIL, VIH:1.1V, 1.9V
  • Current - Peak Output (Source, Sink):290mA, 430mA
  • Input Type:Inverting, Non-Inverting
  • Rise / Fall Time (Typ):75ns, 35ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

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L6399D

Overview

The L6399D is a high-voltage half-bridge gate driver manufactured using BCD offline technology, designed for N-channel power MOSFETs and IGBTs. It features a floating high-side section capable of withstanding a voltage rail up to 600 V. The device includes an integrated bootstrap diode and an internal 320 ns deadtime interlocking function. Logic inputs are CMOS/TTL compatible down to 3.3 V. Key electrical parameters include a supply voltage range of 10 V to 20 V, peak output currents of 290 mA source and 430 mA sink, and switching times of 75 ns rise and 35 ns fall with a 1 nF load. It operates within a temperature range of -40°C to +125°C.

Feature Summary

  • High voltage rail capability up to 600 V with dV/dt immunity of ± 50 V/ns over the full temperature range.
  • Integrated bootstrap diode and internal 320 ns deadtime interlocking function for simplified layout and bill of material reduction.
  • CMOS/TTL logic input compatibility down to 3.3 V facilitates easy interfacing with microcontrollers and DSPs.

Applications

  • Driving N-channel power MOSFETs in half-bridge configurations
  • Driving IGBTs in high-voltage power conversion circuits
  • Offline power supply applications requiring isolated gate drive

Procurement Notes

Verify the specific suffix (e.g., D vs DTR) to confirm package type and reel quantity. Ensure the design supports the 600 V floating rail requirements and utilizes the integrated bootstrap diode correctly. Confirm that the 3.3 V logic interface meets the system's MCU or DSP output levels without additional level shifting.

Selection Notes

Select this component when a single-chip solution for high-voltage half-bridge driving is required. The integrated deadtime and bootstrap diode reduce external component count compared to discrete solutions. Verify that the 430 mA sink current is sufficient for the target power device gate charge requirements at the intended switching frequency.

Part Context

The L6399 belongs to STMicroelectronics' L638x/L639x series of high-voltage gate drivers. These devices utilize BCD technology to integrate high-voltage components with low-voltage logic on a single chip. This series is distinct from standard low-voltage drivers due to its ability to handle floating potentials up to 600 V.

Replacement Considerations

L6399DTR is the tape-and-reel variant of the same functional device. Other members of the L639x family may offer different pin counts or feature sets but share similar underlying technology.

L6399DL6399D
$0.69
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