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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:10V ~ 20V
- Logic Voltage - VIL, VIH:1.1V, 1.9V
- Current - Peak Output (Source, Sink):290mA, 430mA
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):75ns, 35ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6399DTR is a high-voltage half-bridge gate driver manufactured using BCD offline technology. It provides independent drive for N-channel power MOSFETs or IGBTs with a floating high-side section rated up to 600 V. The device features integrated bootstrap diode, internal 320 ns deadtime, and interlocking function. Logic inputs are CMOS/TTL compatible down to 3.3 V. Driver current capability is 290 mA source and 430 mA sink. Switching times are 75 ns rise and 35 ns fall with 1 nF load. dV/dt immunity is ±50 V/ns over the full temperature range. Supply voltage operates between 10 V and 20 V.
Feature Summary
- High voltage rail withstands up to 600 V on the floating high-side section
- Integrated bootstrap diode and internal 320 ns deadtime simplify circuit design
- Interlocking function prevents simultaneous conduction of high and low-side switches
- CMOS/TTL logic inputs compatible down to 3.3 V for microcontroller interfacing
Applications
- Driving N-channel power MOSFETs in offline switch-mode power supplies
- Driving IGBTs in motor control and inverter applications
- High-voltage isolated gate driving in industrial power electronics
Procurement Notes
Verify that the ordering suffix 'DTR' corresponds to the tape and reel packaging format as specified by STMicroelectronics. Confirm the component status is active and check for any recent product change notices regarding assembly or material changes. Ensure the requested quantity matches the standard supplier package size to avoid partial reel issues. Validate RoHS compliance status against current regulatory requirements before finalizing procurement.
Selection Notes
Select this component when a single-chip solution for driving N-channel MOSFETs or IGBTs in a half-bridge configuration is required. It is suitable for applications needing high dV/dt immunity and integrated protection features like deadtime and interlocking. Consider the 600 V high-side rating and 10 V to 20 V supply range compatibility. This driver simplifies bill of materials by integrating the bootstrap diode and reducing external component count.
Part Context
The L6399 belongs to a family of high-voltage gate drivers from STMicroelectronics designed for offline applications. It utilizes BCD technology to integrate high-voltage capabilities with standard logic interfaces. Similar devices in the series may offer different pin counts or driver configurations, but the L6399 specifically targets compact half-bridge designs with integrated protection features for reliable operation in harsh electrical environments.
Replacement Considerations
Public confirmed substitute part numbers include L6399D (tube packaging) and L6399DR (alternative reel variant). Verify pinout compatibility and electrical specifications match exactly before substitution. Check if the alternative packaging affects handling or storage requirements. Ensure the replacement maintains the same high-voltage rating and logic input compatibility.
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