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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 14SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:-
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:10V ~ 20V
- Logic Voltage - VIL, VIH:1.45V, 2V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):15ns, 15ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:14-SO
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6491DTR is a high-voltage half-bridge gate driver manufactured using BCD6 OFF-LINE technology, designed for N-channel power MOSFETs or IGBTs. It features a floating high-side section supporting voltage rails up to 600 V and provides 4 A source/sink current capability. The device includes an integrated bootstrap diode, adjustable deadtime, interlocking functions, and smart shutdown capabilities. Logic inputs are CMOS/TTL compatible down to 3.3 V, ensuring easy interfacing with microcontrollers and DSPs.
Feature Summary
- High dV/dt immunity of ±50 V/ns across the full temperature range
- Integrated comparator for fast fault protection against over-current and over-temperature
- Smart shutdown function with adjustable deadtime and interlocking logic
- CMOS/TTL compatible logic inputs operating down to 3.3 V
Applications
- Industrial motor control systems
- Inverter circuits
- Power supply designs requiring high-voltage isolation
Procurement Notes
Verify that the specific suffix 'DTR' corresponds to the tape-and-reel packaging configuration as defined in the official STMicroelectronics datasheet. Confirm that the ordering part number matches the exact package type and marking requirements for your assembly process. Ensure compatibility with the EVAL6491HB demonstration board if performance validation is required before final implementation.
Selection Notes
Select this component when a single-chip solution for driving N-channel MOSFETs or IGBTs in a half-bridge topology is required. It is suitable for applications needing robust dV/dt immunity and integrated protection features like smart shutdown and adjustable deadtime. The 4 A drive current supports moderate switching speeds, while the 600 V rail rating fits standard industrial voltage levels.
Part Context
The L6491DTR belongs to the L6491 family of high-voltage gate drivers from STMicroelectronics. These devices utilize BCD6 OFF-LINE technology to integrate high-voltage and low-voltage circuitry on a single chip. This approach simplifies layout and reduces bill-of-materials by including components such as the bootstrap diode directly within the driver IC.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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