L6494L

L6494L

  • Description:IC GATE DRVR HALF-BRIDGE 14SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:3392201ebba0 Category: Brand:

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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 14SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:10V ~ 20V
  • Logic Voltage - VIL, VIH:1.45V, 2V
  • Current - Peak Output (Source, Sink):2A, 2.5A
  • Input Type:CMOS/TTL
  • Rise / Fall Time (Typ):25ns, 25ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:14-SO
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):500 V

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L6494L

Overview

The L6494L is a high-voltage half-bridge gate driver manufactured using BCD6 OFF-LINE technology, designed for N-channel power MOSFETs and IGBTs. It features a floating high-side section supporting a 500 V voltage rail with 600 V transient withstand capability. The device provides 2 A source and 2.5 A sink output currents at 25 °C, ensuring efficient driving of medium to high-capacity switches. Logic inputs are compatible with 3.3 V and 5 V CMOS/TTL standards, facilitating direct interfacing with microcontrollers or DSPs. Key electrical specifications include a propagation delay of 85 ns and switching times of 25 ns rise/fall with a 1 nF load.

Feature Summary

  • Integrated bootstrap diode simplifies PCB layout and reduces bill of materials
  • Independent UVLO protection circuits on both high-side and low-side sections prevent operation in dangerous conditions
  • High dV/dt immunity of ±50 V/ns across the full temperature range ensures signal integrity
  • Single input configuration with programmable deadtime and active-low shutdown pin

Applications

  • Driving N-channel power MOSFETs in half-bridge configurations
  • Driving IGBTs in medium and high capacity power applications
  • Evaluation of gate driver performance using the EVAL6494L demonstration board
  • Off-line power supply designs requiring compact component layouts

Procurement Notes

Verify that the specific part number suffix matches the required package type and tape/reel configuration before ordering. Confirm that the manufacturer documentation aligns with the requested variant, as STMicroelectronics may offer different packaging options for the same core device. Ensure compatibility with the intended application environment regarding operating temperature ranges and voltage ratings specified in the official datasheet.

Selection Notes

Select the L6494L when designing circuits that require robust high-voltage isolation and fast switching speeds for power MOSFETs or IGBTs. The integrated bootstrap diode and single-input architecture make it suitable for designs aiming to minimize external component count and simplify layout. Consider this driver for applications where 3.3 V logic compatibility and independent under-voltage lockout protection are critical for system reliability and efficiency.

Part Context

The L6494L belongs to STMicroelectronics' portfolio of MOSFET and IGBT gate drivers, specifically utilizing BCD6 OFF-LINE technology. This technology enables the integration of high-voltage components on a single chip, distinguishing it from standard logic families. The device is part of a broader ecosystem that includes evaluation boards like the EVAL6494L, which supports developers in testing driver performance with TO-220 or TO-247 packaged power switches.

Replacement Considerations

Public confirmed substitute part numbers: None.

L6494LL6494L

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