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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:10V ~ 16.6V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):170mA, 270mA
- Input Type:RC Input Circuit
- Rise / Fall Time (Typ):-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6571BD is a high-voltage half-bridge gate driver manufactured by STMicroelectronics, designed for driving external N-channel power MOSFETs and IGBTs. It features a built-in programmable oscillator with frequency set by external components or driven by an external logic signal. The device includes internal dead-time logic to prevent cross-conduction, offering a typical dead time of 0.72µs. It supports a high-voltage rail up to 600V via bootstrap and provides robust dV/dt immunity up to ±50V/ns. Key electrical parameters include a peak sink current of 270mA and a peak source current of 170mA. The unit operates within a supply voltage range of 10V to 16.6V and incorporates under-voltage lockout with hysteresis.
Feature Summary
- High-voltage half-bridge topology supporting up to 600V self-bootstrap operation
- Built-in programmable oscillator compatible with external RC timing or logic signals
- Integrated dead-time generation to ensure safe switching of power devices
- High dV/dt immunity rated at ±50V/ns for noise resilience
Applications
- Electronic ballast control for fluorescent lamps
- Half-bridge resonant converter topologies
- Induction heating systems
- Power factor correction circuits
Procurement Notes
Verify the specific suffix 'BD' indicates the SOIC package variant distinct from the DIP version. Confirm the dead-time specification aligns with the B-series characteristic of 0.72µs rather than the A-series. Ensure the application environment respects the maximum junction temperature limits. Validate that the supply voltage remains within the specified operational window during all transient conditions.
Selection Notes
Select this component when a compact surface-mount solution is required for high-voltage half-bridge applications. The L6571BD offers lower dead time compared to the L6571A, suitable for higher frequency operations. Consider the SOIC package constraints regarding thermal dissipation and board space. Verify compatibility with the intended power switch gate charge requirements against the driver's current capability.
Part Context
The L6571 series comprises two primary variants: L6571A and L6571B. The distinction lies in the internal dead-time duration, with the B-series providing a shorter delay. The L6571BD specifically denotes the B-series device housed in an SOIC package. This family is part of ST's off-line technology portfolio, optimized for lighting and power conversion systems requiring robust high-side driving capabilities.
Replacement Considerations
The L6571AD serves as a direct functional substitute with identical electrical characteristics but utilizes a DIP package instead of SOIC.
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