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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:10V ~ 16.6V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):170mA, 270mA
- Input Type:RC Input Circuit
- Rise / Fall Time (Typ):-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6571BD013TR is a high-voltage half-bridge gate driver manufactured by STMicroelectronics, designed for driving external N-channel power MOSFETs and IGBTs. It features a built-in programmable oscillator with frequency set by external components and includes internal logic to ensure dead time, preventing cross-conduction of power devices. The device operates within a supply voltage range of 10 V to 16.6 V and supports a high-voltage rail up to 600 V. It provides peak output currents of 270 mA sink and 170 mA source. The component is housed in an SOIC-8 surface-mount package and functions reliably across an operating temperature range of -40°C to +125°C.
Feature Summary
- Integrated high-voltage half-bridge driver capable of handling rails up to 600 V with dV/dt immunity up to ±50 V/ns.
- Built-in programmable oscillator allows frequency customization via external resistor and capacitor, or direct logic signal drive.
- Internal dead-time control mechanism prevents simultaneous conduction of connected power devices to avoid cross-conduction.
- High current drive capability ensures efficient switching of external N-channel MOSFETs and IGBTs.
Applications
- Driving power switches in resonant converter topologies
- Gate driving in flyback transformer circuits
- Control stages for high-frequency power supplies
Procurement Notes
Verify the specific suffix 'D013TR' against official STMicroelectronics documentation to confirm the SOIC-8 tape-and-reel packaging configuration. Confirm that the part status aligns with current availability, as distribution channels may report varying stock levels or discontinuation notices. Ensure compatibility with existing PCB footprints and thermal management requirements before finalizing procurement decisions.
Selection Notes
Select this component when a robust half-bridge driver with integrated dead-time protection and high-voltage tolerance is required. The L6571BD variant offers a typical dead time of 0.72 µs, which differs from the L6571A version. Consider the 10 V minimum supply requirement and the need for external timing components for oscillator programming. Evaluate the SOIC-8 package constraints against available board space and thermal dissipation needs.
Part Context
The L6571BD013TR belongs to the L6571 series of high-voltage half-bridge drivers from STMicroelectronics. This family is characterized by its ability to operate directly from rectified mains voltage without auxiliary power supplies in some configurations. The 'B' designation indicates specific internal dead-time characteristics compared to other variants in the series, tailored for applications requiring precise switching timing control.
Replacement Considerations
The L6571AD013TR serves as a functional substitute within the same series, differing primarily in internal dead-time specifications (1.25 µs versus 0.72 µs). Verify that the alternative's dead-time value meets the specific application's safety and efficiency requirements. Both parts share identical pinouts, packages, and general electrical characteristics.
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