LF2110BTR

Overview

The LF2110BTR is a high-side and low-side gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. It features a maximum offset voltage of 600V, ensuring reliable operation in high-voltage environments. The device provides a typical source peak drive current of 2.5A and a typical sink peak drive current of 2.5A for robust switching performance. Inputs are designated as HIN and LIN, with no internal deadtime provided.

Feature Summary

• Drives two N-channel MOSFETs or IGBTs in high-side/low-side configuration
• High-side operation capability up to 600V
• Provides 2.5A typical source and sink output currents

Applications

• IGBT gate driving
• MOSFET gate driving
• Half-bridge power converter topologies

Procurement Notes

Verify the specific suffix (e.g., -X) against the datasheet to confirm package type and tape/reel specifications. Littelfuse recommends limiting voltage stress on the device to 50V or less during assembly or handling to prevent damage. Confirm that the ordering part number matches the required electrical characteristics and packaging format before finalizing procurement.

Selection Notes

Select this component when a dual-channel driver for high-side and low-side switches is required. Ensure the application voltage does not exceed the 600V offset rating. Consider that this device lacks internal deadtime; external circuitry must be implemented if deadtime control is necessary for the specific power stage design.

Part Context

The LF2110BTR belongs to the High-Side and Low-Side Drivers Series from Littelfuse. It is categorized under PMIC - Power Management ICs within the Gate Drivers product family. This series is engineered for applications requiring isolated or floating high-side drive capabilities alongside standard low-side control.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.