Memory IC LH28F016SCT-L95 product image

LH28F016SCT-L95

  • Description:IC FLASH 16MBIT PARALLEL 40TSOP
  • Series:-
  • Mfr:Sharp Microelectronics
  • Package:Tray

SKU:70a3347721d2 Category: Brand:

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LH28F016SCT-L95 is listed in the Memory IC range at ChipApex. The manufacturer field lists Sharp Microelectronics. Its product description is IC FLASH 16MBIT PARALLEL 40TSOP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for LH28F016SCT-L95

  • Description:IC FLASH 16MBIT PARALLEL 40TSOP
  • Series:-
  • Mfr:Sharp Microelectronics
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH
  • Memory Size:16Mbit
  • Memory Organization:2M x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:95ns
  • Voltage - Supply:4.75V ~ 5.25V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:40-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package:40-TSOP
  • Access Time:95 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for LH28F016SCT-L95

LH28F016SCT-L95

Memory IC Overview

The LH28F016SCT-L95 is a 16M-bit (2MB x 8) SmartVoltage Flash memory manufactured by Sharp Microelectronics. It features a symmetrically blocked architecture with thirty-two 64KB individually erasable and lockable blocks. The device supports read access times of 95 ns at 5V, 100 ns at 5V ±0.5V, 120 ns at 3.3V, and 150 ns at 2.7V-3.6V. It operates with VCC voltages of 2.7V, 3.3V, or 5V and VPP options of 3.3V, 5V, or 12V. The component includes an internal Write State Machine for automated byte write and block erase operations, offering 100,000 block erase cycles per block.

Memory IC Feature Summary

  • SmartVoltage Technology allows flexible VCC and VPP combinations to optimize power consumption and performance without requiring external high-voltage generators.
  • Enhanced Data Protection provides absolute protection when VPP is grounded, along with flexible hardware and software block locking capabilities.
  • Automated Byte Write and Block Erase functions are managed by an internal Write State Machine via a Command User Interface.
  • Extended Cycling Capability supports up to 100,000 block erase cycles per block and 3.2 million cycles per chip.

Memory IC Applications

  • Resident flash arrays in embedded systems
  • Code and data storage for networking applications
  • Memory cards and SIMMs

Memory IC Procurement Notes

Verify the manufacturer designation as Sharp Microelectronics on official datasheets. Confirm the specific voltage combination requirements for your system design, as the device supports multiple VCC and VPP levels. Ensure the 40-lead TSOP package matches your board layout constraints. Check for RoHS compliance status if required by your manufacturing standards.

Memory IC Selection Notes

Select this component for applications requiring high-density nonvolatile storage with flexible voltage operation. The SmartVoltage feature is suitable for designs needing low power consumption at 2.7V or high performance at 5V. Consider the 40-lead TSOP package for board-constrained environments. Evaluate the block locking features if code security is a priority.

Memory IC Part Context

This part belongs to the LH28F016SCT family of 16M Flash memories. It utilizes Sharp's ETOX Nonvolatile Flash Technology and a 0.38 µm CMOS process. The architecture is based on the 28F008SA design, facilitating upgrades for existing systems. It is not radiation hardened.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

LH28F016SCT-L95LH28F016SCT-L95

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