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LM2005DSGR
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 8WFDFN
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：Half-Bridge
- Channel Type：Synchronous
- Number of Drivers：2
- Gate Type：IGBT, MOSFET (N-Channel)
- Voltage - Supply：9V ~ 18V
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：500mA, 800mA
- Input Type：CMOS, TTL
- Rise / Fall Time (Typ)：28ns, 18ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WFDFN Exposed Pad
- Supplier Device Package：8-WSON (2x2)
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：105 V
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Overview
The LM2005DSGR is a compact high-voltage half-bridge gate driver designed for synchronous buck or half-bridge configurations. It drives high-side and low-side N-channel MOSFETs with integrated bootstrap diode functionality, eliminating the need for external discrete components. The device features a peak source current of 0.5A and a peak sink current of 0.8A. Typical propagation delay is 115ns. Operating voltage ranges from 9V to 18V. Absolute maximum BST voltage is 107V, with SH pin handling -19.5V transient negative voltage. UVLO is provided on both power rails. Available in SOIC-8 and WSON-8 packages.
Feature Summary
- Integrated bootstrap diode reduces component count and PCB area
- Robust SH pin handles -19.5V transient negative voltage for noise immunity
- Independent high-side and low-side drive outputs with asymmetric current capability
- Under-voltage lockout protection on GVDD and BST power rails
Applications
- Synchronous buck converter high-side and low-side MOSFET driving
- Half-bridge motor control applications
- High-noise industrial environments requiring robust transient handling
- Space-constrained power supply designs utilizing small thermal-enhanced packages
Procurement Notes
Verify the DSGR suffix indicates tape-and-reel packaging configuration distinct from cut-tape variants. Confirm RoHS compliance status matches project requirements. Ensure ordering quantity aligns with reel specifications if bulk procurement is intended. Cross-reference datasheet revision dates to guarantee parameter consistency against design simulations.
Selection Notes
Select this driver when high-voltage isolation up to 107V is required alongside compact footprint constraints. The integrated bootstrap diode simplifies bill-of-materials compared to drivers requiring external diodes. Consider the asymmetric drive currents suitable for specific MOSFET gate charge requirements. Validate thermal performance within the WSON-8 package for high-power density layouts.
Part Context
Part of the LM2005 family of half-bridge gate drivers from Texas Instruments. Shares core electrical characteristics with LM2005DR but differs in packaging and delivery format. Designed to compete with industry-standard pinout drivers while offering enhanced integration through internal bootstrap diode implementation.
Replacement Considerations
LM2005DR serves as a direct functional substitute with identical electrical specifications. Verify package compatibility between SOIC-8 and WSON-8 if physical board space allows. Ensure pinout alignment remains consistent across both variants for drop-in replacement scenarios.
