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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Texas Instruments
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 14V
- Logic Voltage - VIL, VIH:2.3V, -
- Current - Peak Output (Source, Sink):3A, 3A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):430ns, 260ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):100 V
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Overview
The LM25101AM/NOPB is a high-voltage, half-bridge gate driver manufactured by Texas Instruments. It integrates independent high-side and low-side drivers in an 8-SOIC package. The device supports a supply voltage range of 9 V to 18 V and delivers peak output currents of 3 A for sourcing and sinking. It features fast switching characteristics with typical rise and fall times of 8 ns. The component operates within a junction temperature range of -40°C to +125°C.
Feature Summary
- Integrates independent high-side and low-side drivers for half-bridge configurations
- Supports bootstrap operation for high-side driving up to 100 V
- Provides robust protection against shoot-through via adjustable dead-time control
Applications
- High-voltage MOSFET gate driving in power conversion circuits
- Half-bridge and full-bridge topologies in motor drives
- Isolated power supply implementations requiring high-side switching
Procurement Notes
Verify the specific suffix and package variant against the manufacturer's current datasheet before ordering. Confirm that the intended application voltage and thermal requirements align with the specified operational limits. Check for any recent product change notifications or lifecycle status updates from Texas Instruments to ensure long-term availability and compliance with project specifications.
Selection Notes
Select this component when a compact solution for driving high-side N-channel MOSFETs is required in high-voltage environments. Ensure the input logic levels are compatible with the controller interface. Evaluate the thermal performance of the SOIC-8 package against the expected power dissipation. Consider the need for external bootstrap components and verify that the PCB layout supports the high-current output paths effectively.
Part Context
This part belongs to the LM25101 family of high-voltage gate drivers designed for demanding power electronics applications. It serves as a bridge between low-voltage control logic and high-power switching devices. The series offers various package options to suit different thermal and spatial constraints while maintaining consistent electrical performance characteristics across the lineup.
Replacement Considerations
Consult the official Texas Instruments cross-reference guide for verified substitutes. Ensure any replacement maintains compatibility with the 9 V to 18 V supply range and 3 A output drive capability. Verify pinout equivalence and thermal characteristics to avoid redesigning the printed circuit board.
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