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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8WSON
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 14V
- Logic Voltage - VIL, VIH:2.3V, -
- Current - Peak Output (Source, Sink):3A, 3A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):430ns, 260ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-WDFN Exposed Pad
- Supplier Device Package:8-WSON (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):100 V
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Overview
The LM25101ASD-1/NOPB is a half-bridge gate driver manufactured by Texas Instruments, designed for high-voltage applications. It features a wide supply voltage range from 9 V to 18 V and supports peak output currents of 3 A for both sourcing and sinking. The device operates within an extended temperature range of -40°C to +125°C junction temperature. Packaged in an 8-pin WSON format, it integrates fast switching characteristics with low propagation delay to ensure efficient MOSFET control.
Feature Summary
- Provides robust high-side and low-side drive capabilities suitable for high-voltage power conversion topologies
- Integrates undervoltage lockout mechanisms to prevent improper operation during power-up or fault conditions
- Features TTL-compatible input thresholds to facilitate direct interfacing with various logic controllers
Applications
- High-voltage motor drive systems requiring reliable half-bridge control
- Industrial power supplies utilizing active clamp or resonant converter architectures
- Inverter circuits for renewable energy and battery management systems
Procurement Notes
Verify the specific suffix designation against the manufacturer's current datasheet to confirm package type and tape-and-reel specifications. Ensure that the ordering information matches the exact functional variant required for the design, as minor suffix changes may indicate different packaging or qualification levels without altering core electrical performance.
Selection Notes
Select this component when designing circuits that require a compact solution for driving high-side N-channel MOSFETs in high-voltage environments. Consider the thermal performance of the WSON package and the need for adequate PCB copper area for heat dissipation. Evaluate the input signal compatibility to ensure the logic levels align with the driver's threshold requirements for optimal switching efficiency.
Part Context
This device belongs to the LM25101 family of gate drivers, which are engineered for demanding power management applications. The series offers a balance of high current drive capability and compact footprint, making it suitable for space-constrained designs. It complements other Texas Instruments power management solutions by providing precise control over external switching elements in complex power stages.
Replacement Considerations
Consult official substitution guides for equivalent half-bridge drivers with matching voltage ratings and current capabilities. Verify pin-to-pin compatibility if replacing existing designs to avoid PCB layout modifications. Ensure that any substitute part meets the same operating temperature and supply voltage specifications.
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