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LM25101ASDX-1/NOPB
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 8WSON
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Driven Configuration：Half-Bridge
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：9V ~ 14V
- Logic Voltage - VIL, VIH：2.3V, -
- Current - Peak Output (Source, Sink)：3A, 3A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：430ns, 260ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：8-WSON (4x4)
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：100 V
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Overview
The LM25101ASDX-1/NOPB is a high-voltage, half-bridge gate driver manufactured by Texas Instruments. It integrates high-side and low-side drivers designed for driving N-channel power MOSFETs in harsh electrical environments. The device supports a supply voltage range from 9 V to 18 V and delivers a peak output current of 3 A. It features fast switching characteristics with typical rise and fall times of 8 ns. The component operates within an extended temperature range of -40°C to +125°C and is housed in an 8-pin WSON package.
Feature Summary
- Integrates high-side and low-side gate drivers for single N-channel MOSFET control
- Provides robust protection against false triggering via internal blanking circuits
- Supports high-voltage operation suitable for demanding industrial applications
Applications
- Industrial motor drives
- High-voltage DC-DC converters
- Inverter systems
Procurement Notes
Verify the specific suffix 'SDX-1' against the official Texas Instruments datasheet to confirm pinout and functional equivalence with standard variants. Ensure the ordering part number matches the exact package type and thermal pad configuration required for the PCB layout. Cross-reference RoHS compliance status and lead time requirements directly with authorized distributors prior to finalizing procurement plans.
Selection Notes
Select this component when a compact solution for driving a single N-channel MOSFET is required in high-voltage contexts. The integrated design eliminates the need for external bootstrap diodes or level shifters. Consider the 8 ns switching speed for high-frequency applications and ensure the thermal performance of the WSON package meets the system's heat dissipation requirements under continuous load conditions.
Part Context
This device belongs to the LM25101 family of high-voltage gate drivers. The family is characterized by its ability to operate at elevated voltages while maintaining precise control over power switches. Variants within the series may differ in packaging options such as SOIC or WSON, but share core electrical specifications including the 3 A drive capability and wide operating temperature range defined by the manufacturer.
Replacement Considerations
Direct substitutes include other LM25101 variants with different package codes, such as LM25101AM/NOPB (SOIC) or LM25101CSDX/NOPB (WSON). Verify that the alternative package maintains compatible footprint dimensions and thermal characteristics. Functional replacement requires matching the 9 V to 18 V supply range and 3 A output current specifications.
