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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 10WSON
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 14V
- Logic Voltage - VIL, VIH:2.3V, -
- Current - Peak Output (Source, Sink):3A, 3A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):430ns, 260ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-WDFN Exposed Pad
- Supplier Device Package:10-WSON (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):100 V
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Overview
The LM25101ASDX/NOPB is a half-bridge gate driver manufactured by Texas Instruments. It operates within a supply voltage range of 9 V to 18 V and delivers peak output currents of 3 A for both sourcing and sinking. The device features fast switching characteristics with typical rise and fall times of 8 ns. It is housed in an 8-WSON package and supports surface-mount installation. The component functions reliably across an extended temperature range from -40 °C to +125 °C.
Feature Summary
- Provides high-current drive capability suitable for powering power MOSFETs efficiently.
- Features low propagation delay and fast transition times for precise timing control.
- Includes undervoltage lockout mechanisms to prevent improper operation during low supply conditions.
Applications
- High-side and low-side gate driving for synchronous rectification applications
- Power factor correction (PFC) circuits
- DC-DC converter topologies requiring isolated or non-isolated gate drive
Procurement Notes
Verify the specific suffix 'SDX' corresponds to the WSON-8 package variant when reviewing datasheets. Confirm that the operating voltage requirements align with the 9 V to 18 V specification. Ensure thermal management strategies account for the small form factor and junction temperature limits up to 125 °C during design validation.
Selection Notes
Select this component when a compact solution is required for driving N-channel MOSFETs in high-frequency switching applications. The wide input voltage range accommodates various bus voltages. Consider the 8-WSON package constraints regarding PCB layout and thermal dissipation compared to larger SOIC packages.
Part Context
This part belongs to the LM25101 family of high-voltage half-bridge gate drivers. It shares functional similarities with other variants like the LM25101AM and LM25101BMAX, differing primarily in package type and minor electrical characteristics. The family is designed for robust performance in industrial and automotive power conversion systems.
Replacement Considerations
Direct substitutes include LM25101ASDX-1/NOPB for fixed delay options. Other pin-compatible alternatives within the same series may require verification of package dimensions and electrical parameters against the original specifications.
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