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LM25101BSDX/NOPB
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 10WSON
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：Half-Bridge
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：9V ~ 14V
- Logic Voltage - VIL, VIH：2.3V, -
- Current - Peak Output (Source, Sink)：2A, 2A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：570ns, 430ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-WDFN Exposed Pad
- Supplier Device Package：10-WSON (4x4)
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：100 V
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Overview
The LM25101BSDX/NOPB is a high-voltage half-bridge gate driver manufactured by Texas Instruments. It integrates independent high-side and low-side drivers designed to drive N-channel power MOSFETs in hard-switching applications. The device operates with a supply voltage range of 9 V to 14 V and supports bootstrap voltages up to 100 V. Key electrical parameters include a peak output current of 2 A, a typical rise time of 570 ns, and a fall time of 430 ns. It is housed in a WSON-10 package and functions within an operating temperature range of -40 °C to +125 °C.
Feature Summary
- Integrates independent high-side and low-side drivers for half-bridge configurations
- Supports high-voltage operation with bootstrap capability up to 100 V
- Provides robust drive performance with 2 A peak output current
Applications
- Hard-switching power supplies
- Motor control systems
- Industrial automation drives
Procurement Notes
Verify the specific suffix 'BSDX' against the official datasheet to confirm pinout and thermal pad configuration. Ensure the component meets RoHS compliance requirements as indicated by the NOPB designation. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a compact solution for driving N-channel MOSFETs in high-voltage environments is required. The integrated design reduces external component count compared to discrete driver solutions. Consider the 2 A drive strength and switching speeds relative to the target MOSFET capacitance and desired switching frequency for optimal efficiency.
Part Context
This device belongs to the LM25101 family of high-voltage gate drivers from Texas Instruments. The family includes variants such as the LM25101AMRX/NOPB and LM25101ASDX-1/NOPB, which offer similar functionality but may differ in package type, drive current capabilities, or specific timing characteristics. These components are commonly used in power management IC portfolios for industrial and automotive applications.
Replacement Considerations
Direct substitutes within the same family include LM25101AMRX/NOPB and LM25101ASDX-1/NOPB. Verify package compatibility and electrical parameter alignment, particularly drive current and switching times, before substituting.
