— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:HALF BRIDGE BASED MOSFET DRIVER,
- Series:-
- Mfr:Texas Instruments
- Package:Bulk
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4V ~ 6.85V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):3A, 4.5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):17ns, 12ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):33 V
Download product information
Overview
The LM27222M is a high-speed synchronous half-bridge MOSFET gate driver manufactured by Texas Instruments. It integrates two independent channels designed to drive N-channel power MOSFETs in half-bridge configurations. The device operates with a supply voltage range of 4V to 6.85V and supports bootstrap voltages up to 33V. It delivers peak output currents of 3A source and 4.5A sink, enabling fast switching transitions with typical rise and fall times of 17ns and 12ns respectively. The component functions within an operating temperature range of -40°C to 125°C TJ.
Feature Summary
- Integrates dual non-inverting channels for synchronous half-bridge control
- Provides asymmetric peak drive current capability for optimized switching performance
- Supports operation with standard logic-level input signals
Applications
- Synchronous buck converter topologies
- Half-bridge DC-DC conversion stages
- Motor driver interfaces requiring isolated or bootstrap drive
Procurement Notes
Verify the specific suffix designation against official Texas Instruments documentation to confirm package type and RoHS compliance status. Ensure the ordering part number matches the required thermal pad configuration and lead finish specifications defined in the latest datasheet revision.
Selection Notes
Select this component when a compact solution for driving synchronous MOSFETs is required. Consider the 8-pin VSSOP package constraints for PCB layout. Evaluate the 33V bootstrap limit against the target bus voltage requirements to ensure adequate headroom for high-side gate drive generation.
Part Context
This device belongs to the LM2722x family of high-speed gate drivers from Texas Instruments. It shares functional similarities with other members like the LM27222SD/NOPB but differs primarily in packaging format. The series is engineered for applications demanding rapid switching speeds and efficient power management in space-constrained designs.
Replacement Considerations
The LM27222SD/NOPB serves as a verified alternative offering identical electrical characteristics in an 8-WSON package. Verify pinout compatibility and thermal dissipation requirements before substituting between VSSOP and WSON footprints.
ChipApex | Global Electronic Components Supplier









