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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Texas Instruments
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4V ~ 7V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):3A, 3.2A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):17ns, 12ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LM2722M/NOPB is a high-speed synchronous/asynchronous MOSFET gate driver manufactured by Texas Instruments. It operates within an input voltage range of 4.5 V to 18 V and supports supply voltages up to 30 V. The device features independent high-side and low-side outputs capable of delivering peak drive currents of 3 A source and 6 A sink. It utilizes a half-bridge topology with non-inverting inputs for both channels. The component is housed in an 8-pin SOIC package and is rated for operation across a temperature range of -40°C to +125°C.
Feature Summary
- Provides independent high-side and low-side gate drive signals for synchronous rectification applications
- Features robust output stage capable of sourcing 3 A and sinking 6 A to rapidly switch external MOSFETs
- Includes internal blanking circuitry to prevent false triggering from shoot-through currents during switching transitions
Applications
- Synchronous buck converter power stages
- Half-bridge and full-bridge DC-DC converter topologies
- Motor driver gate drive circuits
Procurement Notes
Verify the specific suffix 'NOPB' confirms lead-free and RoHS compliance status as per the manufacturer's current documentation. Confirm the package marking matches the standard 8-SOIC footprint dimensions. Ensure the ordering part number aligns with the intended tape-and-reel or tube quantity specifications provided in the official datasheet.
Selection Notes
Select this component when designing power stages requiring asymmetric drive strength, specifically where higher sink current is needed to discharge gate capacitance quickly. Evaluate the maximum operating frequency against the propagation delay specifications to ensure timing accuracy. Consider the thermal performance of the SOIC package relative to the expected continuous drive current and ambient conditions.
Part Context
This device belongs to the LM2722 family of high-speed gate drivers designed for efficient power management. It serves as a critical interface between low-voltage control logic and high-power switching elements. The family is characterized by its ability to handle wide input voltage ranges and provide reliable driving capabilities in noisy electromagnetic environments typical of switching power supplies.
Replacement Considerations
Direct substitutes include the LM2722MX variant which shares identical electrical characteristics but differs in packaging format. Other compatible options within the same functional class may include devices from the LM5113 series, though pinout and parameter verification against the specific application requirements is necessary.
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