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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4V ~ 7V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):3A, 3.2A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):17ns, 12ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LM2722MX is a high-speed synchronous and asynchronous MOSFET gate driver manufactured by Texas Instruments. It is housed in an 8-pin SOIC package designed for surface-mount applications. The device operates within a temperature range of -40°C to +125°C. It features a half-bridge based architecture with a single functional unit. The component provides a nominal output peak current of 3.2 A. It utilizes voltage-mode control and pulse width modulation techniques for switching regulation functions.
Feature Summary
- Supports both synchronous and asynchronous MOSFET driving configurations
- High-speed operation capability for efficient switching performance
- Integrated half-bridge topology for dual-switch control
Applications
- Synchronous rectification in DC-DC converters
- Asynchronous rectification circuits
- Half-bridge power stage driving
Procurement Notes
Verify the specific suffix and marking code against the official datasheet to confirm the exact variant, as packaging or revision differences may exist. Ensure the component meets the required RoHS compliance status for your target market, noting that some listings indicate non-compliance. Cross-reference the manufacturer part number with the distributor's catalog to confirm availability and authenticity before finalizing procurement orders.
Selection Notes
Select this component when a dedicated gate driver is required for high-speed MOSFET switching in half-bridge topologies. Consider the 3.2 A peak current capability relative to the gate charge requirements of the target MOSFETs. Evaluate the thermal performance within the specified operating temperature range. Ensure the SOIC package footprint aligns with the PCB layout constraints and assembly capabilities.
Part Context
This component belongs to the Texas Instruments analog mixed-signal IC family, specifically categorized under drivers and interfaces. It serves as a critical interface element between low-voltage control logic and high-power switching devices. The device supports various power management architectures requiring precise timing and robust drive signals for efficient energy conversion.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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