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Product Detailed Parameters
- Description:HALF BRIDGE BASED MOSFET DRIVER,
- Series:-
- Mfr:National Semiconductor
- Package:Bulk
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 14V
- Logic Voltage - VIL, VIH:2.3V, -
- Current - Peak Output (Source, Sink):1A, 1A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):990ns, 715ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package:8-MSOP-PowerPad
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):118 V
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Overview
The LM5100CMYE/NOPB is a half-bridge gate driver IC manufactured by Texas Instruments, formerly National Semiconductor. It features two independent non-inverting drivers designed for N-channel MOSFETs. The device operates within a supply voltage range of 9 V to 14 V and supports high-side voltages up to 118 V via bootstrap. Typical output peak current is 1 A, with propagation delays of approximately 20 ns. Rise and fall times are typically 990 ns and 715 ns, respectively. It functions in temperatures from -40°C to +125°C TJ and is housed in an 8-MSOP package with an exposed power pad.
Feature Summary
- Provides dual independent non-inverting outputs for driving high-side and low-side N-channel MOSFETs in half-bridge configurations.
- Supports high-side operation with bootstrap capability for voltages up to 118 V relative to the floating ground.
- Delivers typical peak output currents of 1 A for both sourcing and sinking operations.
Applications
- High-voltage half-bridge power conversion circuits
- Industrial motor drive systems requiring isolated gate control
- Inverter topologies utilizing N-channel MOSFET switching
Procurement Notes
Verify the manufacturer designation carefully, as this component was originally produced by National Semiconductor before its acquisition by Texas Instruments. Confirm that the specific suffix 'NOPB' indicates lead-free compliance and RoHS adherence. Ensure the package variant matches the required 8-MSOP form factor with an exposed thermal pad for adequate heat dissipation during operation.
Selection Notes
Select this driver when a compact solution is needed for driving N-channel MOSFETs in half-bridge applications with supply voltages between 9 V and 14 V. It is suitable for designs requiring moderate peak currents around 1 A and propagation delays near 20 ns. Consider the 8-MSOP package constraints and thermal requirements associated with the exposed pad design for proper PCB layout.
Part Context
This component belongs to the LM5100 family of high-voltage half-bridge gate drivers. While other variants in the series offer higher peak currents such as 2 A or 3 A, the LM5100CMYE/NOPB specifically provides 1 A output capability. The family shares common architectural features for driving high-side and low-side switches in power electronics applications.
Replacement Considerations
Publicly confirmed substitute part numbers include LM5100CMYX/NOPB and LM5100CMYX-NOPB, which share identical electrical characteristics and pinouts but may differ in reel packaging specifications.
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