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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 10WSON
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 14V
- Logic Voltage - VIL, VIH:2.3V, -
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):570ns, 430ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-WDFN Exposed Pad
- Supplier Device Package:10-WSON (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):118 V
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Overview
The LM5101BSD is a high-voltage half-bridge gate driver manufactured by Texas Instruments. It integrates independent high-side and low-side drivers designed to drive N-channel power MOSFETs in half-bridge configurations. The device operates with a supply voltage range of 9 V to 14 V and provides a peak output current of 2 A for both the high-side and low-side channels. It features non-inverting logic inputs and supports an input voltage up to 118 V relative to ground. The component is housed in a WSON-10 surface-mount package and is rated for operation across an extended temperature range from -40°C to +125°C.
Feature Summary
- Integrates independent high-side and low-side gate drivers for driving N-channel MOSFETs in half-bridge topologies
- Supports bootstrap operation for high-side switching with a wide common-mode range up to 118 V
- Provides robust 2 A peak source and sink current capability for fast switching transitions
- Features non-inverting logic inputs compatible with standard digital control signals
Applications
- Synchronous buck converters requiring isolated or bootstrap-driven high-side switches
- Half-bridge DC-DC converter stages in industrial power supplies
- Motor driver circuits utilizing N-channel MOSFETs for phase legs
- Isolated gate drive interfaces in power electronics systems
Procurement Notes
Verify the exact suffix against the manufacturer's official datasheet to confirm pinout, package dimensions, and electrical specifications. Ensure the ordering part number matches the required thermal performance and packaging format. Cross-reference the RoHS compliance status and lead time requirements with authorized distributors prior to procurement to ensure alignment with project timelines and regulatory standards.
Selection Notes
Select this component when a compact solution for driving N-channel MOSFETs in a half-bridge configuration is required. The 2 A output current is suitable for medium-power applications where moderate switching speeds are acceptable. Consider the WSON-10 package for space-constrained designs. Verify that the input signal levels are compatible with the non-inverting logic threshold and that the bootstrap circuit design can support the required high-side voltage swing within the 118 V common-mode limit.
Part Context
The LM5101B series belongs to Texas Instruments' family of high-voltage half-bridge gate drivers. These devices are engineered to simplify the design of power conversion stages by integrating both high-side and low-side drive functions into a single IC. The LM5101BSD variant specifically utilizes a WSON-10 package, offering a smaller footprint compared to traditional SOIC packages while maintaining similar electrical characteristics. This series is commonly used in applications requiring reliable gate driving for power MOSFETs in harsh environments.
Replacement Considerations
Check for LM5101BSDX/NOPB as a potential equivalent with identical electrical specifications but potentially different packaging or tape-and-reel options. Verify compatibility with LM5101ASD if a LLP-10 package is acceptable, noting differences in physical dimensions. Ensure any substitute maintains the 2 A output current capability and 118 V common-mode range.
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