— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 10WSON
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 14V
- Logic Voltage - VIL, VIH:2.3V, -
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):570ns, 430ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-WDFN Exposed Pad
- Supplier Device Package:10-WSON (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):118 V
Download product information
Overview
The LM5101BSDX/NOPB is a high-voltage half-bridge gate driver manufactured by Texas Instruments. It features independent high-side and low-side drivers capable of sourcing and sinking 2 A peak currents. The device operates within a supply voltage range of 9 V to 14 V and supports bootstrap operation for the high-side channel. Key electrical specifications include a maximum propagation delay of 26 ns, with rise and fall times of 570 ns and 430 ns respectively. It is housed in a WSON-10 package and functions reliably across an operating temperature range from -40°C to +125°C.
Feature Summary
- Independent high-side and low-side channels for half-bridge configurations
- High peak output current capability of 2 A for fast switching
- Integrated under-voltage lockout protection for reliable operation
Applications
- Synchronous rectification in DC-DC converters
- Motor control systems requiring half-bridge topologies
- Industrial power supply designs
Procurement Notes
Verify the complete part number includes the /NOPB suffix to ensure compliance with RoHS standards and lead-free manufacturing requirements. Confirm the specific package variant matches the WSON-10 footprint required for the design. Cross-reference the datasheet revision to ensure compatibility with current design guidelines and application notes provided by Texas Instruments.
Selection Notes
Select this component when a 2 A drive current is sufficient for the target MOSFET or IGBT load. The WSON-10 package offers a compact solution compared to larger SOIC options. Ensure the application voltage does not exceed the 100 V rating. Consider thermal performance within the -40°C to +125°C range during layout planning.
Part Context
This device belongs to the LM5101B series of high-voltage gate drivers. It shares functional similarities with other members like the LM5101M but differs in packaging and specific electrical characteristics. The series is designed for robust performance in isolated and non-isolated power conversion applications requiring precise timing and high current drive.
Replacement Considerations
LM5101BMAX/NOPB offers identical electrical specifications in an SOIC-8 package.
ChipApex | Global Electronic Components Supplier








