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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 10WSON
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):1.6A, 1.6A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):600ns, 600ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-WDFN Exposed Pad
- Supplier Device Package:10-WSON (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):118 V
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Overview
The LM5101SD/NOPB is a high-voltage half-bridge gate driver manufactured by Texas Instruments. It integrates independent high-side and low-side drivers in a compact 10-WSON package. The device supports supply voltages from 9V to 14V and drives N-channel MOSFETs with peak output currents of 3A. It features fast switching characteristics, including rise and fall times of 10ns and 260ns respectively, ensuring efficient power conversion. Operating temperatures range from -40°C to +125°C.
Feature Summary
- Integrates independent high-side and low-side drivers for half-bridge configurations
- Supports N-channel MOSFETs with high peak output current capability
- Features fast switching speeds with minimal propagation delay
- Operates reliably across extended industrial temperature ranges
Applications
- Synchronous rectification in DC-DC converters
- Motor control systems requiring half-bridge topologies
- Industrial power supplies and inverters
Procurement Notes
Verify the specific suffix 'SD' corresponds to the 10-WSON package when sourcing. Confirm RoHS compliance status as indicated by the '/NOPB' designation. Ensure the supplier provides original manufacturer documentation to validate authenticity against counterfeit components. Check for any recent product change notices affecting pinout or electrical specifications.
Selection Notes
Select this component for applications requiring a compact solution for driving N-channel MOSFETs in half-bridge circuits. Consider the 10-WSON package size constraints and thermal dissipation requirements. Evaluate the 3A peak current capability against the target MOSFET gate charge requirements. Verify that the input logic levels are compatible with the control circuitry.
Part Context
This part belongs to the LM5101 family of high-voltage gate drivers from Texas Instruments. The family includes variants with different packages such as SOIC-8 and WSON-8, and varying performance characteristics like output current and switching speed. The LM5101SD/NOPB specifically denotes the version housed in a 10-pin WSON package.
Replacement Considerations
LM5101ASD/NOPB offers similar functionality but may have different switching speed parameters. LM5101M/NOPB is available in an SOIC-8 package with potentially different thermal and electrical characteristics. Direct substitutes should be verified against the official datasheet for pin compatibility and electrical limits.
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