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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 10VSSOP
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):1.6A, 1.6A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):600ns, 600ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
- Supplier Device Package:10-VSSOP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):118 V
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Overview
The LM5102MM is a half-bridge gate driver IC manufactured by Texas Instruments. It features two independent channels with non-inverting input logic, designed to drive N-channel MOSFETs. The device supports a high-side voltage up to 118 V using bootstrap operation and operates within a supply voltage range of 9 V to 14 V. Peak output current capability is 1.6 A for both sourcing and sinking. Typical rise and fall times are 600 ns. It is housed in a 10-VSSOP package and rated for junction temperatures from -40°C to 125°C.
Feature Summary
- Provides dual independent half-bridge driving configuration for high-side and low-side power switches.
- Supports high-voltage operation with a maximum self-bootstrapped high-side voltage of 118 V.
- Features robust peak output current capability of 1.6 A for efficient MOSFET switching.
- Utilizes non-inverting input logic compatible with standard control interfaces.
Applications
- High-voltage motor control systems
- Industrial power conversion circuits
- Inverter bridge driver stages
Procurement Notes
Verify component status carefully as the LM5102MM is marked as obsolete by the manufacturer. Confirm availability through authorized distributors or check for direct replacement options such as the LM5102MM/NOPB variant which maintains RoHS compliance. Ensure that any substitute part matches the original pinout and electrical specifications to maintain system integrity without requiring PCB redesign.
Selection Notes
Select this component when designing circuits requiring isolated gate driving for high-side N-channel MOSFETs in high-voltage environments. Consider the 10-VSSOP package constraints for thermal management and board space. Evaluate the 1.6 A peak current against the total gate charge of the target MOSFETs to ensure adequate switching speed. Verify that the 9 V to 14 V supply range aligns with the available system power rails.
Part Context
This device belongs to the LM5102 family of high-voltage gate drivers from Texas Instruments. It is specifically engineered for applications demanding reliable switching of power semiconductors in harsh industrial conditions. The component serves as a critical interface between low-voltage control logic and high-power switching elements, enabling precise control in complex power electronics architectures.
Replacement Considerations
The LM5102MM/NOPB is listed as a direct replacement. This alternative offers identical functionality while ensuring compliance with RoHS standards. Designers should verify that the NOPB variant meets all environmental and regulatory requirements for their specific application before substitution.
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