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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 10WSON
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):1.2A, 1.8A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):15ns, 10ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-WDFN Exposed Pad
- Supplier Device Package:10-WSON (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):118 V
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Overview
The LM5106SDX/NOPB is a half-bridge gate driver IC designed for high-voltage applications. It features non-inverting inputs and supports synchronous drive configurations for N-channel MOSFETs. The device operates with a supply voltage range of 8V to 14V and withstands bootstrap voltages up to 118V. Peak output currents are specified at 1.2A source and 1.8A sink. Typical rise and fall times are 15ns and 10ns, respectively. Logic thresholds are defined at 0.8V (VIL) and 2.2V (VIH). It is housed in a 10-WSON package with a thermal pad and functions within a junction temperature range of -40°C to 125°C.
Feature Summary
- Supports high-side bootstrap operation up to 118V for driving high-voltage N-channel MOSFETs
- Provides asymmetric peak output current capability with 1.8A sink and 1.2A source drive strength
- Features fast switching performance with typical rise and fall times of 15ns and 10ns
- Includes logic input thresholds compatible with standard digital control interfaces
Applications
- High-voltage motor drives
- Industrial power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix against official Texas Instruments documentation to confirm RoHS compliance and package variations. Ensure the ordering part number matches the required tape-and-reel or cut-tape configuration. Cross-reference the datasheet revision date to confirm technical specifications align with current manufacturing standards before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring isolated high-side gate driving for N-channel MOSFETs in high-voltage environments. Consider the 118V bootstrap rating and asymmetric drive currents for optimal switching performance. Verify that the 8V to 14V supply range fits the system's available power rails and that the 10-WSON package dimensions accommodate the PCB layout constraints.
Part Context
The LM5106 belongs to the LM510x family of half-bridge gate drivers from Texas Instruments. This series is engineered for robust performance in demanding power conversion applications. The SDX variant denotes the surface-mount WSON package option. It serves as a modern replacement for older legacy drivers, offering improved switching speeds and higher voltage tolerance capabilities.
Replacement Considerations
Direct substitutes include the LM5105SD/NOPB, which offers similar half-bridge functionality but with symmetric 1.8A/1.8A drive currents.
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