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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8WSON
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):1.3A, 1.4A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):15ns, 15ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-WDFN Exposed Pad
- Supplier Device Package:8-WSON (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):118 V
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Overview
The LM5107SDX/NOPB is a half-bridge gate driver manufactured by Texas Instruments, designed for driving N-channel MOSFETs. It operates within a supply voltage range of 8V to 14V and supports bootstrap high-side voltages up to 118V. The device features peak output currents of 1.4A source and sink, with typical rise and fall times of 15ns. It utilizes a non-inverting input configuration and is housed in a 10-WSON (4x4) surface-mount package. The component functions reliably across an operating temperature range of -40°C to +125°C TJ.
Feature Summary
- Integrated half-bridge driver topology supporting synchronous N-channel MOSFET configurations
- Capable of handling high-side bootstrap voltages up to 118V for isolated gate drive applications
- Provides symmetrical 1.4A peak source and sink current capability for efficient switching
- Features fast 15ns typical transition times to minimize switching losses
Applications
- Synchronous buck converter designs requiring high-side and low-side gate control
- Isolated power supply topologies utilizing bootstrap drive schemes
- Motor driver circuits necessitating robust half-bridge switching capabilities
- DC-DC converter stages demanding fast transient response and high efficiency
Procurement Notes
Verify the complete part number including the suffix /NOPB to ensure compliance with RoHS3 standards and lead-free manufacturing specifications. Confirm the package variant corresponds to the 10-WSON footprint required for your PCB layout. Cross-reference the manufacturer's latest datasheet to validate electrical characteristics against your specific application requirements before finalizing procurement decisions.
Selection Notes
Select this component when a dedicated half-bridge driver with high-voltage bootstrap capability is required. Ensure the system supply voltage remains within the 8V to 14V operational window. Consider the 1.4A output current rating relative to the total gate charge of the target MOSFETs to guarantee adequate switching speed. Verify that the thermal performance of the 10-WSON package aligns with the expected power dissipation in the intended environment.
Part Context
This device belongs to the LM510x family of gate drivers from Texas Instruments, which are engineered for high-performance power management applications. The LM5107 variant specifically targets half-bridge configurations, offering a balance of drive strength and switching speed. It serves as a critical interface between low-voltage logic controllers and high-power switching elements in modern electronic systems.
Replacement Considerations
Direct substitutes include the LM5107MA/NOPB, which shares similar electrical specifications but utilizes an SOIC-8 package. Designers must account for pinout compatibility and thermal pad differences when transitioning between the WSON and SOIC packages. Verify that any alternative maintains the same 118V bootstrap voltage rating and 1.4A drive current.
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