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LM5109ASD/NOPB
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 8WSON
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：Half-Bridge
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：8V ~ 14V
- Logic Voltage - VIL, VIH：0.8V, 2.2V
- Current - Peak Output (Source, Sink)：1A, 1A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：15ns, 15ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：8-WSON (4x4)
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：108 V
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Overview
The LM5109ASD/NOPB is a high-voltage half-bridge gate driver designed for driving N-channel power MOSFETs. It features two independent drivers with a peak output current of 1 A and operates within a supply voltage range of 8 V to 14 V. The device supports bootstrap operation up to 108 V, ensuring reliable high-side switching. Typical rise and fall times are 15 ns, with propagation delays under 29 ns. It functions reliably across an extended junction temperature range from -40°C to +125°C.
Feature Summary
- Integrated high-side and low-side drivers for complete half-bridge control
- Capable of supporting bootstrap voltages up to 108 V for high-side applications
- Provides symmetrical 1 A peak source and sink currents for fast switching
- Operates independently without requiring phase-shifted inputs
Applications
- High-voltage synchronous buck converters
- Half-bridge DC-DC converter topologies
- Motor drive circuits requiring isolated or floating gate control
- Industrial power supplies utilizing high-side N-channel MOSFETs
Procurement Notes
Verify the specific suffix against the manufacturer's latest documentation to confirm RoHS compliance and package variations. Ensure the ordering part number matches the required tape-and-reel quantity specifications. Cross-reference the datasheet revision history to validate electrical characteristics before finalizing procurement contracts.
Selection Notes
Select this component when designing circuits that require driving N-channel MOSFETs in a half-bridge configuration with high common-mode voltage capabilities. It is suitable for applications needing moderate drive strength with minimal external components. Consider thermal performance and PCB layout requirements for the WSON package during the design phase.
Part Context
This device belongs to the LM5109 family of high-voltage gate drivers manufactured by Texas Instruments. It serves as a specialized interface between logic-level control signals and high-power switching elements. The series is engineered for robust performance in demanding power conversion environments.
Replacement Considerations
LM5109ASD/NOPB is listed as a direct replacement for the discontinued LM5109ASD. Verify pinout compatibility and electrical specifications before substituting other half-bridge drivers in existing designs.
