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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):1A, 1A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):15ns, 15ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):108 V
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Overview
The LM5109BMAX is a high-voltage half-bridge gate driver designed for synchronous buck and half-bridge configurations. It features independent high-side and low-side drivers with a 1 A peak output current capability. The device operates with a supply voltage range of 8 V to 14 V and supports bootstrap voltages up to 108 VDC. Key electrical parameters include a typical propagation delay of 30 ns, rise/fall times of 15 ns, and maximum on/off delays of 2 ns. It functions within an operating temperature range of -40 °C to +125 °C.
Feature Summary
- Provides independent high-side and low-side drive capabilities for N-channel MOSFETs
- Features robust level shifting technology compatible with TTL and CMOS logic inputs
- Includes undervoltage lockout (UVLO) protection on both low-side and high-side power rails
Applications
- Current feedback push-pull converters
- Half-bridge power converters
- Full-bridge power converters
Procurement Notes
Verify the specific suffix 'MAX' against the manufacturer's official documentation to confirm package type and temperature grade. Ensure compatibility with system voltage requirements, specifically the 8 V to 14 V supply range and 108 VDC bootstrap limit. Confirm that the SOIC-8 surface-mount package aligns with PCB layout constraints and thermal management strategies before finalizing procurement.
Selection Notes
Select this component when driving high-side and low-side N-channel MOSFETs in high-voltage applications requiring independent control. It is suitable for designs needing fast switching speeds with minimal propagation delay mismatch. Consider its 1 A peak current capability for driving moderate gate loads efficiently. Verify input logic compatibility with the host controller's TTL or CMOS levels.
Part Context
This part belongs to the LM5109B series of high-voltage gate drivers from Texas Instruments. It is engineered for power management integrated circuits (PMIC) applications, specifically focusing on efficient switching control. The device integrates necessary protections like UVLO to ensure reliable operation in demanding power conversion environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
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