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LM5109BQNGTRQ1
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 8WSON
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：Half-Bridge
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：8V ~ 14V
- Logic Voltage - VIL, VIH：0.8V, 2.2V
- Current - Peak Output (Source, Sink)：1A, 1A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：15ns, 15ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：8-WSON (4x4)
- Grade：Automotive
- Qualification：AEC-Q100
- High Side Voltage - Max (Bootstrap)：108 V
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Overview
The LM5109BQNGTRQ1 is an automotive-grade high-voltage half-bridge gate driver manufactured by Texas Instruments. It features a single driver configuration with two outputs, delivering a peak output current of 1 A. The device operates within a supply voltage range of 8 V to 14 V and supports independent high-side and low-side control. It exhibits rise and fall times of 15 ns each, with propagation delays up to 32 ns. The component functions reliably across a temperature range of -40°C to +125°C and is housed in an 8-pin WSON package.
Feature Summary
- Automotive qualification compliant with AEC-Q100 standards for reliable operation in vehicle environments.
- Integrated bootstrap diode simplifies high-side drive circuit design by eliminating external components.
- Independent high-side and low-side outputs allow flexible control configurations for power switches.
Applications
- Automotive DC-DC converter systems
- On-board charger (OBC) applications
- Motor control circuits
Procurement Notes
Verify the specific suffix QNGT against official Texas Instruments documentation to confirm packaging type and reel specifications. Ensure the procurement channel provides valid traceability for automotive-grade components. Cross-reference the full part number with the manufacturer's latest datasheet to confirm availability status and any potential lifecycle changes before finalizing orders.
Selection Notes
Select this component when designing automotive power stages requiring robust gate driving capabilities. The integrated bootstrap diode reduces bill-of-materials complexity compared to drivers lacking this feature. Consider the 1 A peak current capability for driving medium-power MOSFETs or IGBTs. Verify that the 8 V to 14 V supply range aligns with the system's available rail voltages.
Part Context
This part belongs to the LM5109B series of high-voltage half-bridge gate drivers from Texas Instruments. The series is designed for demanding power conversion applications. The QNGTRQ1 designation indicates a specific automotive-grade variant with tape-and-reel packaging, distinct from tube-packaged versions like the LM5109BMA/NOPB.
Replacement Considerations
The LM5109BQNGTTQ1 is a confirmed substitute part number within the same family, differing primarily in packaging format rather than electrical function.
