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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8WSON
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):1A, 1A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):15ns, 15ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-WDFN Exposed Pad
- Supplier Device Package:8-WSON (4x4)
- Grade:Automotive
- Qualification:AEC-Q100
- High Side Voltage - Max (Bootstrap):108 V
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Overview
The LM5109BQNGTTQ1 is a high-voltage half-bridge gate driver designed for driving high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. It features independent TTL-compatible inputs, a 1 A peak output current, and operates with supply voltages between 8 V and 14 V. The device supports bootstrap voltages up to 118 VDC and includes undervoltage lockout on both power rails. It utilizes robust level-shifting technology for fast propagation times of 27 ns typical, with rise and fall times of 15 ns. Qualified under AEC-Q100 standards, it functions within a temperature range of -40°C to +125°C and is housed in an 8-pin WSON package.
Feature Summary
- Independent control of high-side and low-side outputs via TTL-compatible inputs
- Robust level-shifting technology enabling high-speed operation with low power consumption
- Undervoltage lockout protection provided on both the low-side and high-side power rails
Applications
- Synchronous buck converter topologies
- Half-bridge power stage configurations
- High-voltage motor drive systems
Procurement Notes
Verify that the specific ordering suffix matches the required automotive qualification and packaging format. Confirm the component meets AEC-Q100 reliability standards for the intended application environment. Ensure the selected variant corresponds to the correct thermal performance requirements associated with the WSON-8 package type.
Selection Notes
Select this component when a cost-effective solution for driving N-channel MOSFETs at high voltages is required. The device is suitable for applications needing independent control of high-side and low-side switches. Consider the 1 A peak current capability and the specific input threshold compatibility when designing the control logic interface.
Part Context
This part belongs to the LM5109 series of high-voltage gate drivers from Texas Instruments. The series is engineered for efficient switching in power electronics, offering a balance of performance and cost. The QNGTTQ1 designation indicates a specific automotive-grade configuration within this family, tailored for reliable operation in demanding electrical environments.
Replacement Considerations
LM5109BMAX/NOPB
FAQ
What is the maximum voltage supported by the bootstrap capacitor?
The device supports a bootstrap voltage up to 118 VDC.
Does the LM5109BQNGTTQ1 include protection against low supply voltage?
Yes, it provides undervoltage lockout functionality on both the low-side and high-side power rails.
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