LM5109BQNGTTQ1

LM5109BQNGTTQ1

$1.29
  • Description:IC GATE DRVR HALF-BRIDGE 8WSON
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:ebce5750dbf6 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8WSON
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:8V ~ 14V
  • Logic Voltage - VIL, VIH:0.8V, 2.2V
  • Current - Peak Output (Source, Sink):1A, 1A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):15ns, 15ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-WDFN Exposed Pad
  • Supplier Device Package:8-WSON (4x4)
  • Grade:Automotive
  • Qualification:AEC-Q100
  • High Side Voltage - Max (Bootstrap):108 V

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LM5109BQNGTTQ1

Overview

The LM5109BQNGTTQ1 is a high-voltage half-bridge gate driver designed for driving high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. It features independent TTL-compatible inputs, a 1 A peak output current, and operates with supply voltages between 8 V and 14 V. The device supports bootstrap voltages up to 118 VDC and includes undervoltage lockout on both power rails. It utilizes robust level-shifting technology for fast propagation times of 27 ns typical, with rise and fall times of 15 ns. Qualified under AEC-Q100 standards, it functions within a temperature range of -40°C to +125°C and is housed in an 8-pin WSON package.

Feature Summary

  • Independent control of high-side and low-side outputs via TTL-compatible inputs
  • Robust level-shifting technology enabling high-speed operation with low power consumption
  • Undervoltage lockout protection provided on both the low-side and high-side power rails

Applications

  • Synchronous buck converter topologies
  • Half-bridge power stage configurations
  • High-voltage motor drive systems

Procurement Notes

Verify that the specific ordering suffix matches the required automotive qualification and packaging format. Confirm the component meets AEC-Q100 reliability standards for the intended application environment. Ensure the selected variant corresponds to the correct thermal performance requirements associated with the WSON-8 package type.

Selection Notes

Select this component when a cost-effective solution for driving N-channel MOSFETs at high voltages is required. The device is suitable for applications needing independent control of high-side and low-side switches. Consider the 1 A peak current capability and the specific input threshold compatibility when designing the control logic interface.

Part Context

This part belongs to the LM5109 series of high-voltage gate drivers from Texas Instruments. The series is engineered for efficient switching in power electronics, offering a balance of performance and cost. The QNGTTQ1 designation indicates a specific automotive-grade configuration within this family, tailored for reliable operation in demanding electrical environments.

Replacement Considerations

LM5109BMAX/NOPB

FAQ

What is the maximum voltage supported by the bootstrap capacitor?

The device supports a bootstrap voltage up to 118 VDC.

Does the LM5109BQNGTTQ1 include protection against low supply voltage?

Yes, it provides undervoltage lockout functionality on both the low-side and high-side power rails.

LM5109BQNGTTQ1LM5109BQNGTTQ1
$1.29
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