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LM5109BQNGTTQ1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is IC GATE DRVR HALF-BRIDGE 8WSON. Review the specifications below when checking this part for your BOM.
The LM5109BQNGTTQ1 is a high-voltage half-bridge gate driver designed for driving high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. It features independent TTL-compatible inputs, a 1 A peak output current, and operates with supply voltages between 8 V and 14 V. The device supports bootstrap voltages up to 118 VDC and includes undervoltage lockout on both power rails. It utilizes robust level-shifting technology for fast propagation times of 27 ns typical, with rise and fall times of 15 ns. Qualified under AEC-Q100 standards, it functions within a temperature range of -40°C to +125°C and is housed in an 8-pin WSON package.
Verify that the specific ordering suffix matches the required automotive qualification and packaging format. Confirm the component meets AEC-Q100 reliability standards for the intended application environment. Ensure the selected variant corresponds to the correct thermal performance requirements associated with the WSON-8 package type.
Select this component when a cost-effective solution for driving N-channel MOSFETs at high voltages is required. The device is suitable for applications needing independent control of high-side and low-side switches. Consider the 1 A peak current capability and the specific input threshold compatibility when designing the control logic interface.
This part belongs to the LM5109 series of high-voltage gate drivers from Texas Instruments. The series is engineered for efficient switching in power electronics, offering a balance of performance and cost. The QNGTTQ1 designation indicates a specific automotive-grade configuration within this family, tailored for reliable operation in demanding electrical environments.
LM5109BMAX/NOPB
The device supports a bootstrap voltage up to 118 VDC.
Yes, it provides undervoltage lockout functionality on both the low-side and high-side power rails.
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