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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8WSON
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):1A, 1A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):15ns, 15ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-WDFN Exposed Pad
- Supplier Device Package:8-WSON (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):108 V
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Overview
The LM5109BSD is a high-voltage half-bridge gate driver manufactured by Texas Instruments. It features an 8-pin LLP surface-mount package and delivers a peak output current of 1 A for driving N-channel MOSFETs. The device operates with a supply voltage range of 8 V to 14 V and supports bootstrap voltages up to 118 VDC. Key electrical characteristics include rise and fall times of 15 ns, typical propagation delays of 27 ns, and excellent delay matching of 2 ns. It functions within a temperature range of -40°C to +125°C.
Feature Summary
- Independent TTL-compatible inputs for high-side and low-side control
- Robust level-shifting technology for clean logic-to-gate conversion
- Under-voltage lockout protection on both power rails
Applications
- High-side and low-side N-channel MOSFET drivers in synchronous buck converters
- Half-bridge configurations requiring high-voltage isolation
- Industrial motor control systems
Procurement Notes
Verify the specific suffix 'BSD' against the manufacturer's official documentation to confirm the LLP-8 package variant. Ensure compatibility with the required thermal management solutions for the exposed pad design. Cross-reference the RoHS status and lead-free specifications with the latest datasheet revision to meet regulatory requirements for your assembly process.
Selection Notes
Select this component when a cost-effective solution is needed for driving high-side MOSFETs in isolated or floating applications. The independent input structure allows flexible control schemes. Consider the thermal performance of the LLP-8 package relative to the SOIC-8 alternative if board space is constrained but heat dissipation is critical.
Part Context
This part belongs to the LM5109 series of high-voltage gate drivers designed for robust operation in demanding power electronics environments. The series emphasizes low propagation delay and high peak current capability to ensure efficient switching of power MOSFETs. It serves as a bridge between low-voltage logic controllers and high-voltage power stages.
Replacement Considerations
Check for direct pin-compatible alternatives such as the LM5109BMAX/NOPB (SOIC-8) or LM5109QNGTRQ1 (WSON-8, automotive grade). Verify that any substitute maintains the same 1 A peak current rating and 100 V floating supply capability.
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