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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):1A, 1A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):15ns, 15ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):118 V
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Overview
The LM5109MAX is a high-voltage half-bridge gate driver manufactured by Texas Instruments. It features independent TTL-compatible inputs for high-side and low-side control, delivering a 1A peak output current to drive N-channel MOSFETs. The device operates with a supply voltage range of 8V to 14V and supports bootstrap voltages up to 118VDC. Key electrical characteristics include a typical propagation delay of 27ns, rise and fall times of 15ns, and a maximum quiescent current of 2.1mA. It includes under-voltage lockout on both power rails and functions within an operating temperature range of -40°C to +125°C.
Feature Summary
- Independent TTL-compatible inputs for precise high-side and low-side control
- Robust level-shifting technology enabling fast switching with low power consumption
- Integrated under-voltage lockout protection on both VDD and HB power rails
Applications
- High-side and low-side N-channel MOSFET driving in synchronous buck converters
- Half-bridge configurations requiring high-voltage isolation
- Industrial motor control systems
Procurement Notes
Verify the specific suffix 'MAX' corresponds to the SOIC-8 package variant when sourcing. Confirm RoHS compliance status as some database entries indicate non-compliance while others list it as detailed. Ensure the ordering part number matches the exact pinout and thermal requirements for your PCB layout design.
Selection Notes
Select this component for applications requiring a cost-effective solution for driving high-side N-channel MOSFETs. It is suitable where TTL logic compatibility is required without additional level shifting circuitry. Consider the 1A peak current capability for moderate load switching speeds and verify that the 100V floating high-side rail meets the system's bus voltage requirements.
Part Context
This device belongs to the LM5109 series of high-voltage gate drivers from Texas Instruments. It is designed as a low-cost alternative for driving power MOSFETs in various power conversion topologies. The series offers robust performance with fast propagation delays and is compatible with standard logic families, simplifying interface design in power electronics applications.
Replacement Considerations
The LM5109BMAX/NOPB is a related variant within the same family. Verify if the 'B' designation implies specific electrical or packaging differences before substitution. Cross-reference pinouts and electrical specifications to ensure functional equivalence in the target circuit.
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