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LM5109SD/NOPB
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Product Detailed Parameters
- Description：HALF BRIDGE BASED MOSFET DRIVER,
- Series：-
- Mfr：National Semiconductor
- Package：Bulk
- Driven Configuration：Half-Bridge
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：8V ~ 14V
- Logic Voltage - VIL, VIH：0.8V, 2.2 V
- Current - Peak Output (Source, Sink)：1A, 1A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：15ns, 15ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：8-WSON (4x4)
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：118 V
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Overview
The LM5109SD/NOPB is a high-voltage half-bridge gate driver manufactured by Texas Instruments, succeeding the National Semiconductor lineage. It features independent TTL-compatible inputs for high-side and low-side N-channel MOSFETs. The device supports a floating high-side driver operating up to 100V on the power rail. Key electrical parameters include a 1A peak output current, 8V to 14V supply voltage range, and 15ns rise/fall times. Operating temperature spans -40°C to +125°C in an SOIC-8 package.
Feature Summary
- Independent control of high-side and low-side outputs via TTL-compatible inputs
- Robust level-shifting technology for clean signal conversion at high speeds
- Under-voltage lockout protection on both high-side and low-side power rails
Applications
- High-side and low-side N-channel MOSFET driving in synchronous buck converters
- Half-bridge configurations requiring high-voltage isolation
- Industrial motor control systems utilizing N-MOSFET switches
Procurement Notes
Verify that the specific suffix /NOPB indicates lead-free compliance and RoHS status as per Texas Instruments standards. Confirm the package type matches the required SOIC-8 footprint. Ensure the manufacturer designation reflects Texas Instruments, as National Semiconductor assets were acquired. Cross-reference the full part number against official TI distribution channels to avoid counterfeit components or obsolete stock variations.
Selection Notes
Select this component when driving N-channel MOSFETs in high-voltage environments up to 100V. It is suitable for applications requiring independent control of high-side and low-side switches with TTL logic compatibility. Consider the thermal performance of the SOIC-8 package for heat dissipation requirements. Verify that the 1A peak current capability meets the gate charge demands of the target MOSFETs within the specified switching frequency.
Part Context
This device belongs to the LM5109 series of high-voltage gate drivers. It serves as a successor to earlier National Semiconductor products, now managed by Texas Instruments. The series is designed for cost-effective solutions in power electronics, offering robust performance for driving power switches in demanding industrial and automotive applications where high common-mode transient immunity is required.
Replacement Considerations
Public confirmed substitute part numbers include LM5109BMAX/NOPB and LM5109AMA/NOPB. These variants maintain similar functional characteristics within the same family. Verify pinout compatibility and specific electrical parameter tolerances before substitution. Consult official datasheets for detailed comparison of propagation delays and output drive strengths.
