LM5109SD

Overview

The LM5109SD is a high-voltage half-bridge gate driver manufactured by Texas Instruments. It provides independent high-side and low-side outputs with a peak drive current of 1 A. The device operates within a supply voltage range of 8 V to 14 V and supports bootstrap operation up to 108 V. It features fast switching characteristics with typical rise and fall times of 15 ns. The component is designed for surface-mount installation in an 8-WSON package and functions reliably across an extended junction temperature range from -40°C to +125°C.

Feature Summary

• Provides independent high-side and low-side gate drive outputs for synchronous rectification applications
• Supports bootstrap operation for high-side driving with a maximum voltage rating of 108 V
• Features non-inverting logic inputs for straightforward control interface integration

Applications

• Synchronous buck converters
• Half-bridge power stages
• High-frequency DC-DC conversion circuits

Procurement Notes

Verify the specific suffix against official Texas Instruments documentation to confirm package type and RoHS compliance status. Ensure the ordering part number matches the required pinout and thermal pad configuration for your PCB layout. Cross-reference the datasheet revision date to confirm technical specifications align with your design requirements before finalizing procurement.

Selection Notes

Select this component when a compact half-bridge solution with 1 A peak drive capability is required. The 8-WSON package suits space-constrained designs. Verify that the input logic levels are compatible with the controller, as the device specifies distinct thresholds for low and high state recognition. Ensure the application circuit supports the necessary bootstrap capacitor charging for high-side operation.

Part Context

The LM5109 series belongs to Texas Instruments' portfolio of high-voltage gate drivers designed for power management applications. This specific model variant utilizes an 8-pin WSON footprint, offering a smaller form factor compared to traditional SOIC packages while maintaining similar electrical performance characteristics for driving N-channel MOSFETs in half-bridge configurations.

Replacement Considerations

• LM5109SD/NOPB