LM5110-1M/NOPB

Overview

The LM5110-1M/NOPB is a dual 5A compound gate driver manufactured by Texas Instruments, originally developed under the National Semiconductor brand. It features a non-inverting configuration with a 14 ns rise time and 12 ns fall time. The device operates within a supply voltage range of 3.5 V to 14 V and supports an operating temperature range from -40°C to +125°C. Packaged in a 10-pin WSON format, it provides two independent output channels designed for high-speed MOSFET switching applications.

Feature Summary

• Dual channel architecture providing independent control for high-side and low-side power devices
• Integrated negative output voltage capability to ensure reliable turn-off of wide bandgap semiconductors
• Compound driver design combining push-pull strength with controlled current sourcing and sinking

Applications

• Driving silicon carbide (SiC) MOSFETs in high-frequency power converters
• Gate driving gallium nitride (GaN) transistors in compact power supplies
• Isolated gate drive stages in solid-state transformers
• High-efficiency motor drive inverters requiring fast switching transitions

Procurement Notes

Verify that the specific suffix '1M' corresponds to the non-inverting logic configuration required by the system design. Confirm the package type matches the intended PCB footprint, as variations exist between tape-and-reel and tube packaging options. Ensure the component meets RoHS compliance standards if mandated by the end-product regulations. Cross-reference the manufacturer's latest datasheet to confirm pinout compatibility with existing designs.

Selection Notes

Select this component when simultaneous positive and negative gate voltage swings are necessary for optimal performance of modern power switches. The non-inverting logic simplifies control interface requirements compared to inverting alternatives. Consider the thermal characteristics of the WSON package for high-power density implementations. Evaluate the 5A peak current capability against the total gate charge of the target MOSFETs to ensure adequate drive strength.

Part Context

This part belongs to the LM5110 family of compound gate drivers, which bridges the gap between standard logic drivers and complex isolated drivers. Originally introduced by National Semiconductor before its acquisition by Texas Instruments, the series focuses on enabling efficient use of wide bandgap materials. The NOPB suffix indicates lead-free construction compliant with environmental directives.

Replacement Considerations

• LM5110-2SD/NOPB
• LM5110-3SD/NOPB

FAQ

What distinguishes the LM5110-1M/NOPB from other variants in the series?

The '1M' designation specifically identifies the non-inverting logic configuration, whereas other suffixes like '2SD' or '3SD' may indicate different package types or logic polarities.

How does the negative output voltage capability benefit SiC MOSFETs?

It allows the driver to actively pull the gate below ground potential, ensuring robust turn-off and preventing false triggering caused by dv/dt effects in high-noise environments.