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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 10WSON
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:3.5V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):3A, 5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):14ns, 12ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-WDFN Exposed Pad
- Supplier Device Package:10-WSON (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LM5110-1SD is a dual low-side compound gate driver manufactured by Texas Instruments. It provides independent high-current outputs of 5A peak source and sink capability per channel. The device operates within a supply voltage range of 3.5V to 14V. Key electrical parameters include a typical rise time of 14ns and a fall time of 12ns. It supports non-inverting logic inputs and functions across an extended temperature range from -40°C to +125°C. The component is housed in a 10-pin WSON package with an exposed pad for thermal management.
Feature Summary
- Dual-channel architecture delivering independent 5A drive currents for efficient MOSFET switching
- Integrated negative output voltage capability to ensure robust off-state protection against Miller-induced turn-on events
- Non-inverting input configuration simplifies control interface design for synchronous rectification applications
Applications
- Synchronous buck converter circuits requiring precise low-side MOSFET control
- High-efficiency DC-DC power supply topologies utilizing external N-channel MOSFETs
- Industrial motor drive systems needing reliable gate driving under varying load conditions
Procurement Notes
Verify the specific suffix designation when ordering, as variations such as NOPB indicate lead-free compliance and RoHS status. Confirm that the requested part matches the exact pinout and thermal pad requirements of the 10-pin WSON package. Ensure compatibility with the intended operating voltage range and temperature specifications for the target application environment.
Selection Notes
Select this component for designs requiring moderate current drive with built-in protection against false triggering. The dual-channel layout reduces board space compared to single drivers. Consider the 14V maximum supply limit when designing for higher voltage bus systems. Evaluate thermal performance needs due to the exposed pad requirement for adequate heat dissipation during continuous operation.
Part Context
This device belongs to the LM5110 family of compound gate drivers designed for power management applications. It serves as a specialized solution for driving low-side switches in synchronous configurations. The technology integrates both pull-up and pull-down stages to optimize switching speed while maintaining stability. It complements other TI power management ICs by providing dedicated interface capabilities for discrete power stages.
Replacement Considerations
- LM5110-1SD/NOPB
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