LM5110-2M

LM5110-2M

$0.80
  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tube

SKU:dc90f5d4562d Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tube
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:3.5V ~ 14V
  • Logic Voltage - VIL, VIH:0.8V, 2.2V
  • Current - Peak Output (Source, Sink):3A, 5A
  • Input Type:Inverting
  • Rise / Fall Time (Typ):14ns, 12ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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LM5110-2M

Overview

The LM5110-2M is a dual-channel low-side MOSFET gate driver from Texas Instruments, designed for high-speed switching applications. It features independent inverting outputs with peak drive currents of 5 A and 3 A. The device operates within a supply voltage range of 3.5 V to 14 V and supports logic inputs compatible with TTL standards. Key timing parameters include a rise time of 14 ns and a fall time of 12 ns. It functions reliably across an extended temperature range from -40°C to +125°C and is housed in an 8-SOIC surface-mount package.

Feature Summary

  • Dual-channel architecture providing independent control over two low-side MOSFETs
  • Inverting output configuration for precise signal processing
  • Capable of delivering high peak source and sink currents for rapid switching
  • Supports standard TTL logic input thresholds

Applications

  • Synchronous buck converter topologies
  • High-frequency DC-DC power supply designs
  • Motor control systems requiring low-side switching

Procurement Notes

Verify the specific suffix 'M' against official datasheets to confirm the exact tape-and-reel packaging quantity and orientation. Ensure the ordering part number matches the required SOIC package width and lead finish specifications defined by Texas Instruments for this variant.

Selection Notes

Select this component when dual independent low-side driving is required without integrated bootstrap or high-side capabilities. Consider the 5A/3A current asymmetry for asymmetric load requirements. Validate that the 14ns/12ns transition times align with the target switching frequency and EMI constraints of the design.

Part Context

The LM5110 belongs to the LM511x family of gate drivers, which are optimized for driving N-channel MOSFETs in power conversion circuits. This series emphasizes fast switching speeds and robust drive strength to minimize conduction losses and improve overall system efficiency in compact power modules.

Replacement Considerations

Consult official substitution guides for equivalent dual low-side drivers. Verify pinout compatibility and electrical parameter alignment before replacing.

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